Invention Application
- Patent Title: IMAGE SENSOR FOR IMAGING AT A VERY LOW LEVEL OF LIGHT
- Patent Title (中): 用于在非常低的光照下成像的图像传感器
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Application No.: US13319895Application Date: 2010-05-11
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Publication No.: US20120112247A1Publication Date: 2012-05-10
- Inventor: Yvon Cazaux , Benoît Giffard
- Applicant: Yvon Cazaux , Benoît Giffard
- Applicant Address: FR Paris
- Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Current Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Current Assignee Address: FR Paris
- Priority: FR0953194 20090514
- International Application: PCT/FR10/50920 WO 20100511
- Main IPC: H01L27/148
- IPC: H01L27/148
Abstract:
A basic device for an image sensor includes a photogeneration and charge-collecting region formed at the surface of a semiconductor substrate having a first type of conductivity, adapted to be biased at a reference voltage, the photogeneration region being associated with a device for the transfer, multiplication, and insulation of charges. The photogeneration region has an insulated gate mounted thereon, which is adapted to be alternately biased at a first voltage and at a second voltage, the insulated gate being made of a low-absorption material.
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