发明申请
- 专利标题： SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME
- 专利标题（中）： 半导体器件及其制造方法
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申请号： US13289576申请日： 2011-11-04
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公开(公告)号： US20120112361A1公开(公告)日： 2012-05-10
- 发明人: KYU-HEE HAN , Byung-Lyul Park , Byunghee Kim , Sanghoon Ahn , Sangdon Nam , Kyoung-Hee Kim
- 申请人： KYU-HEE HAN , Byung-Lyul Park , Byunghee Kim , Sanghoon Ahn , Sangdon Nam , Kyoung-Hee Kim
- 优先权： KR10-2010-0110522 20101108
- 主分类号： H01L23/48
- IPC分类号： H01L23/48
摘要：
A semiconductor device is provided. The semiconductor device includes a substrate having a via hole comprised of a first region having a first width and a second region having a second width greater than the first width, wherein at least a portion of the substrate is exposed in the via hole, and an insulating region having an air gap spaced apart from and surrounding the first region of the via hole.
公开/授权文献
- US08786058B2 Semiconductor devices and methods of manufacturing the same 公开/授权日：2014-07-22
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