发明申请
- 专利标题： Stressor in Planar Field Effect Transistor Device
- 专利标题（中）： 平面场效应晶体管器件中的应力器
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申请号： US12945026申请日： 2010-11-12
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公开(公告)号： US20120119266A1公开(公告)日： 2012-05-17
- 发明人: Dechao Guo , Pranita Kulkarni , Philip J. Oldiges , Alexander Reznicek , Keith Kwong Hon Wong
- 申请人： Dechao Guo , Pranita Kulkarni , Philip J. Oldiges , Alexander Reznicek , Keith Kwong Hon Wong
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/336
摘要：
A field effect transistor device includes a gate stack portion disposed on a substrate, and a channel region in the substrate having a depth partially defined by the gate stack portion and a silicon region of the substrate, the silicon region having a sloped profile such that a distal regions of the channel region have greater depth than a medial region of the channel region.
公开/授权文献
- US08288217B2 Stressor in planar field effect transistor device 公开/授权日：2012-10-16
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