发明申请
- 专利标题: SEMICONDUCTOR DEVICES HAVING VERTICAL CHANNEL TRANSISTORS AND METHODS FOR FABRICATING THE SAME
- 专利标题(中): 具有垂直通道晶体管的半导体器件及其制造方法
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申请号: US13285263申请日: 2011-10-31
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公开(公告)号: US20120119286A1公开(公告)日: 2012-05-17
- 发明人: Dae-Ik Kim , Hyeong-Sun Hong , Yoo-Sang Hwang , Hyun-Woo Chung
- 申请人: Dae-Ik Kim , Hyeong-Sun Hong , Yoo-Sang Hwang , Hyun-Woo Chung
- 申请人地址: KR Suwon-si
- 专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址: KR Suwon-si
- 优先权: KR10-2010-0112260 20101111
- 主分类号: H01L29/78
- IPC分类号: H01L29/78
摘要:
A semiconductor device has a plurality of vertical channels extending upright on a substrate, a plurality of bit lines extending among the vertical channels, a plurality of word lines which include a plurality of gates disposed adjacent first sides of the vertical channels, respectively, and a plurality of conductive elements disposed adjacent second sides of the vertical channels opposite the first sides. The conductive elements can provide a path to the substrate for charge carriers which have accumulated in the associated vertical channel to thereby mitigate a so-called floating effect.