发明申请
US20120119335A1 Semiconductor Device With A Plurality Of Mark Through Substrate Vias
有权
具有多个标记的半导体器件通过基板通孔
- 专利标题: Semiconductor Device With A Plurality Of Mark Through Substrate Vias
- 专利标题(中): 具有多个标记的半导体器件通过基板通孔
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申请号: US12945134申请日: 2010-11-12
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公开(公告)号: US20120119335A1公开(公告)日: 2012-05-17
- 发明人: Chi-Chih Shen , Jen-Chuan Chen , Hui-Shan Chang , Chung-Hsi Wu , Meng-Jen Wang
- 申请人: Chi-Chih Shen , Jen-Chuan Chen , Hui-Shan Chang , Chung-Hsi Wu , Meng-Jen Wang
- 主分类号: H01L29/41
- IPC分类号: H01L29/41
摘要:
The present invention relates to a semiconductor device with a plurality of mark through substrate vias, comprising a semiconductor substrate, a plurality of original through substrate vias and a plurality of mark through substrate vias. The original through substrate vias and the mark through substrate vias are disposed in the semiconductor substrate and protrude from the backside surface of the semiconductor substrate. The mark through substrate vias are added at a specific position and/or in a specific pattern and serve as a fiducial mark, which facilitates identifying to the position and direction on the backside surface. Thus, the redistribution layer (RDL) or the special equipment for achieving the backside alignment (BSA) is not necessary.
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