发明申请
- 专利标题： THROUGH SILICON VIA WITH IMPROVED RELIABILITY
- 专利标题（中）： 通过硅改善可靠性
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申请号： US12945700申请日： 2010-11-12
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公开(公告)号： US20120119374A1公开(公告)日： 2012-05-17
- 发明人: Arifur Rahman , Bahareh Banijamali
- 申请人： Arifur Rahman , Bahareh Banijamali
- 申请人地址： US CA San Jose
- 专利权人： XILINX, INC.
- 当前专利权人： XILINX, INC.
- 当前专利权人地址： US CA San Jose
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L21/306
摘要：
A semiconductor device includes a substrate having a top surface and a bottom surface, and a through-silicon via (TSV) extending from the top surface of the substrate to the bottom surface of the substrate, the TSV having a height and a side profile extending along a longitudinal axis, wherein the side profile has an upper segment forming a first angle relative to the longitudinal axis, and a lower segment forming a second angle relative to the longitudinal axis, the second angle being different from the first angle, and wherein the lower segment has a height that is less than 20% of the height of the TSV.
公开/授权文献
- US08384225B2 Through silicon via with improved reliability 公开/授权日：2013-02-26
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