Invention Application
- Patent Title: CMOS IMAGER PHOTODIODE WITH ENHANCED CAPACITANCE
- Patent Title (中): 具有增强电容的CMOS IMAGER光电二极管
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Application No.: US13288686Application Date: 2011-11-03
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Publication No.: US20120122261A1Publication Date: 2012-05-17
- Inventor: James W. Adkisson , John J. Ellis-Monaghan , Mark D. Jaffe , Dale J. Pearson , Dennis L. Rogers
- Applicant: James W. Adkisson , John J. Ellis-Monaghan , Mark D. Jaffe , Dale J. Pearson , Dennis L. Rogers
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Main IPC: H01L31/18
- IPC: H01L31/18

Abstract:
A method for manufacturing a pixel sensor cell that includes a photosensitive element having a non-laterally disposed charge collection region. The method includes forming a trench recess in a substrate of a first conductivity type material, and filling the trench recess with a material having second conductivity type material. The second conductivity type material is then diffused out of the filled trench material to the substrate region surrounding the trench to form the non-laterally disposed charge collection region. The filled trench material is removed to provide a trench recess, and the trench recess is filled with a material having a first conductivity type material. A surface implant layer is formed at either side of the trench having a first conductivity type material. A collection region of a trench-type photosensitive element is formed of the outdiffused second conductivity type material and is isolated from the substrate surface.
Public/Granted literature
- US08440490B2 CMOS imager photodiode with enhanced capacitance Public/Granted day:2013-05-14
Information query
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