发明申请
- 专利标题： SEMICONDUCTOR DEVICE MANUFACTURING METHOD
- 专利标题（中）： 半导体器件制造方法
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申请号： US13356812申请日： 2012-01-24
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公开(公告)号： US20120122289A1公开(公告)日： 2012-05-17
- 发明人: Kenji Matsumoto , Hitoshi Itoh , Hiroshi Sato
- 申请人： Kenji Matsumoto , Hitoshi Itoh , Hiroshi Sato
- 申请人地址： JP Tokyo
- 专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人地址： JP Tokyo
- 优先权： JP2009-058056 20090311
- 主分类号： H01L21/02
- IPC分类号： H01L21/02
摘要：
Provided is a semiconductor device manufacturing method for a capacitor having a dielectric film which can be formed into a thin film, can be formed at a low temperature, and has a readily controllable property. The manufacturing method includes: forming, on a conductor for serving as one electrode of a capacitor, a manganese oxide film for serving as a dielectric film of the capacitor; and forming, on the manganese oxide film, a conductive film for serving as the other electrode of the capacitor.
公开/授权文献
- US08314004B2 Semiconductor device manufacturing method 公开/授权日：2012-11-20
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