METHOD FOR SURFACE TREATMENT OF A WAFER

Invention Application

US20120122316A1 METHOD FOR SURFACE TREATMENT OF A WAFER 审中-公开

Title translation: WAFER表面处理方法

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Patent Title: METHOD FOR SURFACE TREATMENT OF A WAFER
Patent Title (中): WAFER表面处理方法
Application No.: US13384889

Application Date: 2010-07-27
Publication No.: US20120122316A1

Publication Date: 2012-05-17
Inventor: Motoi Kurokami , Shigeru Okuuchi , Hiroaki Sato
Applicant: Motoi Kurokami , Shigeru Okuuchi , Hiroaki Sato
Priority: JP2009-175226 20090728
International Application: PCT/JP2010/004775 WO 20100727
Main IPC: H01L21/306
IPC: H01L21/306

Abstract:

An object of the present invention is to provided a wafer exhibiting excellent surface properties, in which variation in reaction, which has been concerned in surface treatment with a diffusion controlled process such as conventional wet treatment, is effectively suppressed in a method for surface treatment of a wafer involving a chemical treatment.Provided is a method for surface treatment of a wafer involving a chemical treatment, the chemical treatment including a reaction controlled process, and a diffusion controlled process following the reaction controlled process.

Abstract(Chinese):

本发明的目的是提供一种显示出优异的表面性质的晶片，其中在常规湿法处理的扩散控制过程中涉及表面处理的反应变化在表面处理方法中被有效地抑制涉及化学处理的晶片。提供了一种用于表面处理包括化学处理的晶片的方法，包括反应控制过程的化学处理和反应控制过程之后的扩散控制过程。

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/302	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/306	......化学或电处理，例如电解腐蚀（形成绝缘层的入H01L21/31；绝缘层的后处理入H01L21/3105）