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    METHOD FOR CLEANING SILICON WAFER AND APPARATUS FOR CLEANING THE SILICON WAFER
    2.
    发明申请
    METHOD FOR CLEANING SILICON WAFER AND APPARATUS FOR CLEANING THE SILICON WAFER 有权
    用于清洁硅波的方法和用于清洁硅波的装置

    公开(公告)号：US20100252070A1

    公开(公告)日：2010-10-07

    申请号：US12746201

    申请日：2008-11-21

    申请人： Shigeru Okuuchi ,  Kazushige Takaishi

    发明人： Shigeru Okuuchi ,  Kazushige Takaishi

    IPC分类号： B08B3/00

    CPC分类号： H01L21/02052 ,  H01L21/67051 ,  Y10S134/902 ,  Y10S438/906 ,  Y10S438/928

    摘要： After a water film is formed on a wafer front surface in a chamber, the water film is supplied sequentially with an oxidizing component of an oxidation gas, an organic acid component of an organic acid mist, an HF component of an HF gas, the organic acid mist, and the oxidizing component of the oxidation gas. As a result, the HF component and the organic acid component provide cleaning effect on the wafer surface, and a concentration of the cleaning components in the water film within a wafer surface can be even.

    摘要翻译： 在室中的晶片正面上形成水膜之后，依次提供氧化气体的氧化成分，有机酸雾的有机酸成分，HF气体的HF成分，有机物 酸雾和氧化气体的氧化成分。 结果，HF成分和有机酸成分对晶片表面提供清洁效果，并且晶片表面内的水膜中的清洁成分的浓度可以是均匀的。

    Silicon wafer cleaning method
    3.
    发明申请
    Silicon wafer cleaning method 有权
    硅片清洗方法

    公开(公告)号：US20070034229A1

    公开(公告)日：2007-02-15

    申请号：US11499142

    申请日：2006-08-04

    申请人： Shigeru Okuuchi ,  Mitsuhiro Endou ,  Tomoya Tanaka

    发明人： Shigeru Okuuchi ,  Mitsuhiro Endou ,  Tomoya Tanaka

    IPC分类号： C23G1/00 ,  B08B3/00

    CPC分类号： B08B3/08 ,  C11D1/66 ,  C11D3/3947 ,  C11D11/0047 ,  C11D11/0064 ,  H01L21/02052

    摘要： A silicon wafer cleaning method, comprising a first cleaning process, in which, after completion of mirror polishing of the surface, the silicon wafer is immersed in a non-ionic surfactant aqueous solution; a second cleaning process, in which the wafer, after completion of the first cleaning process, is immersed in a dissolved-ozone aqueous solution; and, a third cleaning process, in which the wafer, after completion of the second cleaning process, is immersed in an aqueous solution containing ammonia and hydrogen peroxide; and in which the processes are performed in succession.

    摘要翻译： 一种硅晶片清洗方法，包括第一清洁工艺，其中在完成表面的镜面抛光之后，将硅晶片浸入非离子表面活性剂水溶液中; 第二清洗工序，将第一清洗工序完成后的晶片浸入溶解的臭氧水溶液中; 以及第三清洗处理，其中在完成第二清洗处理之后将晶片浸入含有氨和过氧化氢的水溶液中; 并且其中连续执行处理。

    Solar cell wafer and method of producing the same
    4.
    发明授权
    Solar cell wafer and method of producing the same 有权
    太阳能电池晶片及其制造方法

    公开(公告)号：US09276153B2

    公开(公告)日：2016-03-01

    申请号：US13261672

    申请日：2012-01-18

    申请人： Shigeru Okuuchi

    发明人： Shigeru Okuuchi

    IPC分类号： H01L31/052 ,  H01L31/18 ,  H01L21/302 ,  H01L31/0236 ,  H01L31/0216 ,  H01L21/02

    CPC分类号： H01L31/052 ,  H01L21/0203 ,  H01L31/0216 ,  H01L31/02363 ,  H01L31/18 ,  Y02E10/50

    摘要： A solar cell wafer having a porous layer on a surface of a semiconductor wafer typified by a silicon wafer, which can further reduce reflection loss of light at the surface. A solar cell wafer 100 of the present invention has a porous layer 11 having a pore diameter of 10 nm or more and 45 nm or less, on at least one surface 10A of a semiconductor wafer 10, and the layer thickness of the porous layer 11 is more than 50 nm and 450 nm or less.

    摘要翻译： 一种太阳能电池晶片，其在由硅晶片表示的半导体晶片的表面上具有多孔层，能够进一步减少表面的光的反射损失。 本发明的太阳能电池晶片100在半导体晶片10的至少一个表面10A上具有孔径为10nm以上且45nm以下的多孔层11，多孔层11的层厚 大于50nm和450nm以下。

    Method for producing silicon epitaxial wafer
    5.
    发明授权
    Method for producing silicon epitaxial wafer 有权
    硅外延晶片的制造方法

    公开(公告)号：US08673784B2

    公开(公告)日：2014-03-18

    申请号：US13264057

    申请日：2010-04-12

    申请人： Shigeru Okuuchi ,  Shinichi Ogata

    发明人： Shigeru Okuuchi ,  Shinichi Ogata

    IPC分类号： H01L21/461

    CPC分类号： C30B25/186 ,  B24B37/042 ,  C30B29/06 ,  H01L21/02024 ,  H01L21/30625

    摘要： The method for producing a silicon epitaxial wafer according to the present invention has: a growth step F at which an epitaxial layer is grown on a silicon single crystal substrate; a first polishing step D at which, before the growth step, at least a front surface of the silicon single crystal substrate is polished without using abrasive grains; and a second polishing step G at which at least the front surface of the silicon single crystal substrate is subjected to finish polishing after the growth step.

    摘要翻译： 根据本发明的硅外延晶片的制造方法具有：生长步骤F，在硅单晶衬底上生长外延层; 在生长步骤之前，在不使用磨粒的情况下研磨硅单晶衬底的至少前表面的第一抛光步骤D; 以及第二研磨工序G，在生长工序后，至少使硅单晶衬底的前表面进行精加工。

    Method for analyzing impurities in a silicon substrate and apparatus for decomposing a silicon substrate through vapor-phase reaction
    6.
    发明授权
    Method for analyzing impurities in a silicon substrate and apparatus for decomposing a silicon substrate through vapor-phase reaction 有权
    用于分析硅衬底中的杂质的方法和通过气相反应分解硅衬底的装置

    公开(公告)号：US06995834B2

    公开(公告)日：2006-02-07

    申请号：US09775209

    申请日：2001-02-01

    申请人： Mohammad B. Shabani ,  Shigeru Okuuchi

    发明人： Mohammad B. Shabani ,  Shigeru Okuuchi

    IPC分类号： G01N1/00

    CPC分类号： G01N1/32 ,  G01N1/40 ,  G01N2033/0095

    摘要： A method for analyzing impurities present in a silicon substrate. The method includes the steps of accommodating a silicon substrate resting on a support, and a solution for decomposing a silicon substrate which comprises a mixture of hydrofluoric acid, nitric acid and sulfuric acid, in an air-tight reaction vessel, in such a way as to keep the silicon substrate from directly contacting with the decomposing solution; allowing the decomposing solution to vaporize, thereby causing the substrate to decompose through vapor-phase reaction for sublimation, without heating or pressurizing the reaction vessel; and recovering the residue left by the decomposed substrate, to analyze the impurities contained in the substrate. This method makes it possible to determine the content of impurities that are present in a silicon substrate extremely precisely in a comparatively short time by decomposing the substrate through vapor-phase reaction without resorting to heating or pressurization.

    摘要翻译： 一种用于分析存在于硅衬底中的杂质的方法。 该方法包括以下步骤：将放置在支撑体上的硅衬底和用于在气密反应容器中分解含有氢氟酸，硝酸和硫酸的混合物的硅衬底的溶液， 以保持硅衬底不与分解溶液直接接触; 使分解溶液蒸发，从而使基材通过气相反应分解升华，而不加热或加压反应容器; 并回收由分解的基底留下的残留物，以分析底物中所含的杂质。 该方法使得可以通过气相反应分解基板，而不需要加热或加压，在相当短的时间内非常精确地确定硅衬底中存在的杂质的含量。

    METHOD OF PRODUCING WAFER FOR SOLAR CELL, METHOD OF PRODUCING SOLAR CELL, AND METHOD OF PRODUCING SOLAR CELL MODULE
    7.
    发明申请
    METHOD OF PRODUCING WAFER FOR SOLAR CELL, METHOD OF PRODUCING SOLAR CELL, AND METHOD OF PRODUCING SOLAR CELL MODULE 有权
    用于太阳能电池的制造方法，生产太阳能电池的方法和生产太阳能电池模块的方法

    公开(公告)号：US20140057383A1

    公开(公告)日：2014-02-27

    申请号：US14006563

    申请日：2012-04-05

    申请人： Shigeru Okuuchi

    发明人： Shigeru Okuuchi

    IPC分类号： H01L31/0236

    CPC分类号： H01L31/02363 ,  H01L31/02168 ,  Y02E10/50 ,  Y02E10/52

    摘要： Provided is a method of producing a wafer for a solar cell that can produce the solar cell with high conversion efficiency.A method of producing a wafer for a solar cell according to the present invention comprises a first step of contacting lower alcohol to at least one surface of the semiconductor wafer and a second step, after the first step, of contacting hydrofluoric acid containing metal ion to the at least one surface of the semiconductor wafer, and a third step that is, after the second step, a step of contacting alkali solution to the at least one surface of the semiconductor wafer, a step of contacting acid solution containing hydrofluoric acid and nitric acid to the at least one surface of the semiconductor wafer, or a step of carrying out an oxidation treatment to the at least one surface of the semiconductor wafer.

    摘要翻译： 提供一种制造能够以高转换效率制造太阳能电池的太阳能电池用晶片的方法。 根据本发明的太阳能电池晶片的制造方法包括将低级醇与半导体晶片的至少一个表面接触的第一步骤和在第一步骤之后将含有氢氟酸的金属离子与 半导体晶片的至少一个表面，以及第三步骤，在第二步骤之后，使碱溶液与半导体晶片的至少一个表面接触的步骤，使含有氢氟酸和硝酸的酸溶液接触的步骤 酸化至半导体晶片的至少一个表面，或对半导体晶片的至少一个表面进行氧化处理的步骤。

    Method for cleaning silicon wafer and apparatus for cleaning the silicon wafer
    9.
    发明授权
    Method for cleaning silicon wafer and apparatus for cleaning the silicon wafer 有权
    硅晶片的清洗方法及清洗硅晶片的装置

    公开(公告)号：US07955440B2

    公开(公告)日：2011-06-07

    申请号：US12746201

    申请日：2008-11-21

    申请人： Shigeru Okuuchi ,  Kazushige Takaishi

    发明人： Shigeru Okuuchi ,  Kazushige Takaishi

    IPC分类号： C23G1/02

    CPC分类号： H01L21/02052 ,  H01L21/67051 ,  Y10S134/902 ,  Y10S438/906 ,  Y10S438/928

    摘要： After a water film is formed on a wafer front surface in a chamber, the water film is supplied sequentially with an oxidizing component of an oxidation gas, an organic acid component of an organic acid mist, an HF component of an HF gas, the organic acid mist, and the oxidizing component of the oxidation gas. As a result, the HF component and the organic acid component provide cleaning effect on the wafer surface, and a concentration of the cleaning components in the water film within a wafer surface can be even.

    摘要翻译： 在室中的晶片正面上形成水膜之后，依次提供氧化气体的氧化成分，有机酸雾的有机酸成分，HF气体的HF成分，有机物 酸雾和氧化气体的氧化成分。 结果，HF成分和有机酸成分对晶片表面提供清洁效果，并且晶片表面内的水膜中的清洁成分的浓度可以是均匀的。

    Silicon wafer cleaning method
    10.
    发明授权
    Silicon wafer cleaning method 有权
    硅片清洗方法

    公开(公告)号：US07632357B2

    公开(公告)日：2009-12-15

    申请号：US11499142

    申请日：2006-08-04

    申请人： Shigeru Okuuchi ,  Mitsuhiro Endou ,  Tomoya Tanaka

    发明人： Shigeru Okuuchi ,  Mitsuhiro Endou ,  Tomoya Tanaka

    IPC分类号： B08B3/12 ,  B08B6/00

    CPC分类号： B08B3/08 ,  C11D1/66 ,  C11D3/3947 ,  C11D11/0047 ,  C11D11/0064 ,  H01L21/02052

    摘要： A silicon wafer cleaning method, comprising a first cleaning process, in which, after completion of mirror polishing of the surface, the silicon wafer is immersed in a non-ionic surfactant aqueous solution; a second cleaning process, in which the wafer, after completion of the first cleaning process, is immersed in a dissolved-ozone aqueous solution; and, a third cleaning process, in which the wafer, after completion of the second cleaning process, is immersed in an aqueous solution containing ammonia and hydrogen peroxide; and in which the processes are performed in succession.

    摘要翻译： 一种硅晶片清洗方法，包括第一清洁工艺，其中在完成表面的镜面抛光之后，将硅晶片浸入非离子表面活性剂水溶液中; 第二清洗工序，将第一清洗工序完成后的晶片浸入溶解的臭氧水溶液中; 以及第三清洗处理，其中在完成第二清洗处理之后将晶片浸入含有氨和过氧化氢的水溶液中; 并且其中连续执行处理。