Invention Application
- Patent Title: CAPACITORS, SEMICONDUCTOR DEVICES INCLUDING THE SAME AND METHODS OF MANUFACTURING THE SEMICONDUCTOR DEVICES
- Patent Title (中): 电容器，包括其的半导体器件和制造半导体器件的方法
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Application No.: US13290397Application Date: 2011-11-07
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Publication No.: US20120126300A1Publication Date: 2012-05-24
- Inventor: Kiyeon Park , Insang Jeon , Hanjin Lim , Yeongcheol Lee , Jun-Noh Lee
- Applicant: Kiyeon Park , Insang Jeon , Hanjin Lim , Yeongcheol Lee , Jun-Noh Lee
- Priority: KR10-2010-0117062 20101123
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01G4/20 ; H01L21/02
Abstract:
A capacitor includes a first electrode, a first dielectric layer disposed on the first electrode, the first dielectric layer having a tetragonal crystal structure and including a first metal oxide layer doped with a first impurity, a second dielectric layer disposed on the first metal oxide layer, the second dielectric layer having a tetragonal crystal structure and including a second metal oxide layer doped with a second impurity, and a second electrode disposed on the second dielectric layer. The first dielectric layer has a lower crystallization temperature and a substantially higher dielectric constant than the second dielectric layer.
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