Ultra low power apparatus and method to wake up a main processor
    1.
    发明授权
    Ultra low power apparatus and method to wake up a main processor 有权
    超低功耗设备和方法来唤醒主处理器

    公开(公告)号:US09063731B2

    公开(公告)日:2015-06-23

    申请号:US13595119

    申请日:2012-08-27

    Abstract: An apparatus and method for waking up a main processor (MP) in a low power or ultra-low power device preferably includes the MP, and a sub-processor (SP) that utilizes less power than the MP to monitor ambient conditions than the MP, and may be internalized in the MP. The MP and SP can remain in a sleep mode while an interrupt sensor monitors for changes in the ambient environment. A sensor is preferably an interrupt-type sensor, as opposed to polling-type sensors conventionally used to detect ambient changes. The MP and SP may remain in sleep mode, as a low-power or an ultra-low power interrupt sensor operates with the SP being in sleep mode, and awakens the SP via an interrupt indicating a detected change. The SP then wakes the MP after comparing data from the interrupt sensor with values in storage or with another sensor.

    Abstract translation: 用于在低功率或超低功率设备中唤醒主处理器(MP)的装置和方法优选地包括MP以及比MP更少的功率以比MP来监视环境条件的子处理器(SP),而不是MP ,并可能内部在MP。 当中断传感器监视周围环境的变化时,MP和SP可以保持睡眠模式。 与常规用于检测环境变化的轮询型传感器相反,传感器优选地是中断型传感器。 MP和SP可能保持在睡眠模式,因为低功耗或超低功耗中断传感器在SP处于睡眠模式下运行,并通过指示检测到的变化的中断唤醒SP。 然后,SP将中断传感器的数据与存储中的数据或其他传感器进行比较后,唤醒MP。

    Capacitor that includes dielectric layer structure having plural metal oxides doped with different impurities
    2.
    发明授权
    Capacitor that includes dielectric layer structure having plural metal oxides doped with different impurities 有权
    包括具有掺杂有不同杂质的多种金属氧化物的电介质层结构的电容器

    公开(公告)号:US08698221B2

    公开(公告)日:2014-04-15

    申请号:US13290397

    申请日:2011-11-07

    Abstract: A capacitor includes a first electrode, a first dielectric layer disposed on the first electrode, the first dielectric layer having a tetragonal crystal structure and including a first metal oxide layer doped with a first impurity, a second dielectric layer disposed on the first metal oxide layer, the second dielectric layer having a tetragonal crystal structure and including a second metal oxide layer doped with a second impurity, and a second electrode disposed on the second dielectric layer. The first dielectric layer has a lower crystallization temperature and a substantially higher dielectric constant than the second dielectric layer.

    Abstract translation: 电容器包括第一电极,设置在第一电极上的第一电介质层,第一电介质层具有四方晶体结构并且包括掺杂有第一杂质的第一金属氧化物层,设置在第一金属氧化物层上的第二电介质层 所述第二电介质层具有四方晶系结构并且包括掺杂有第二杂质的第二金属氧化物层,以及设置在所述第二电介质层上的第二电极。 第一电介质层具有比第二电介质层低的结晶温度和更高的介电常数。

    ULTRA LOW POWER APPARATUS AND METHOD TO WAKE UP A MAIN PROCESSOR
    3.
    发明申请
    ULTRA LOW POWER APPARATUS AND METHOD TO WAKE UP A MAIN PROCESSOR 有权
    超低功率设备和唤醒主处理器的方法

    公开(公告)号:US20140059365A1

    公开(公告)日:2014-02-27

    申请号:US13595119

    申请日:2012-08-27

    Abstract: An apparatus and method for waking up a main processor (MP) in a low power or ultra-low power device preferably includes the MP, and a sub-processor (SP) that utilizes less power than the MP to monitor ambient conditions than the MP, and may be internalized in the MP. The MP and SP can remain in a sleep mode while an interrupt sensor monitors for changes in the ambient environment. A sensor is preferably an interrupt-type sensor, as opposed to polling-type sensors conventionally used to detect ambient changes. The MP and SP may remain in sleep mode, as a low-power or an ultra-low power interrupt sensor operates with the SP being in sleep mode, and awakens the SP via an interrupt indicating a detected change. The SP then wakes the MP after comparing data from the interrupt sensor with values in storage or with another sensor.

    Abstract translation: 用于在低功率或超低功率设备中唤醒主处理器(MP)的装置和方法优选地包括MP以及比MP更少的功率以比MP来监视环境条件的子处理器(SP),而不是MP ,并可能内部在MP。 当中断传感器监视周围环境的变化时,MP和SP可以保持睡眠模式。 与常规用于检测环境变化的轮询型传感器相反,传感器优选地是中断型传感器。 MP和SP可能保持在睡眠模式,因为低功耗或超低功耗中断传感器在SP处于睡眠模式下运行,并通过指示检测到的变化的中断唤醒SP。 然后,SP将中断传感器的数据与存储中的数据或其他传感器进行比较后,唤醒MP。

    CAPACITORS, SEMICONDUCTOR DEVICES INCLUDING THE SAME AND METHODS OF MANUFACTURING THE SEMICONDUCTOR DEVICES
    4.
    发明申请
    CAPACITORS, SEMICONDUCTOR DEVICES INCLUDING THE SAME AND METHODS OF MANUFACTURING THE SEMICONDUCTOR DEVICES 有权
    电容器,包括其的半导体器件和制造半导体器件的方法

    公开(公告)号:US20120126300A1

    公开(公告)日:2012-05-24

    申请号:US13290397

    申请日:2011-11-07

    Abstract: A capacitor includes a first electrode, a first dielectric layer disposed on the first electrode, the first dielectric layer having a tetragonal crystal structure and including a first metal oxide layer doped with a first impurity, a second dielectric layer disposed on the first metal oxide layer, the second dielectric layer having a tetragonal crystal structure and including a second metal oxide layer doped with a second impurity, and a second electrode disposed on the second dielectric layer. The first dielectric layer has a lower crystallization temperature and a substantially higher dielectric constant than the second dielectric layer.

    Abstract translation: 电容器包括第一电极,设置在第一电极上的第一电介质层,第一电介质层具有四方晶体结构并且包括掺杂有第一杂质的第一金属氧化物层,设置在第一金属氧化物层上的第二电介质层 所述第二电介质层具有四方晶系结构并且包括掺杂有第二杂质的第二金属氧化物层,以及设置在所述第二电介质层上的第二电极。 第一电介质层具有比第二电介质层低的结晶温度和更高的介电常数。

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