发明申请
- 专利标题： TONE INVERSION WITH PARTIAL UNDERLAYER ETCH
- 专利标题（中）： 带有部分底层蚀刻的色调
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申请号： US12952248申请日： 2010-11-23
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公开(公告)号： US20120126358A1公开(公告)日： 2012-05-24
- 发明人: John C. Arnold , Sean D. Burns , Matthew E. Colburn , Steven J. Holmes , Yunpeng Yin
- 申请人： John C. Arnold , Sean D. Burns , Matthew E. Colburn , Steven J. Holmes , Yunpeng Yin
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L21/311
- IPC分类号： H01L21/311 ; H01L23/00 ; H01L21/768
摘要：
A method for tone inversion for integrated circuit fabrication includes providing a substrate with an underlayer on top of the substrate; creating a first pattern, the first pattern being partially etched into a portion of the underlayer such that a remaining portion of the underlayer is protected and forms a second pattern, and such that the first pattern does not expose the substrate located underneath the underlayer; covering the first pattern with a layer of image reverse material (IRM); and etching the second pattern into the substrate. A structure for tone inversion for integrated circuit fabrication includes a substrate; a partially etched underlayer comprising a first pattern located over the substrate, the first pattern being partially etched into a portion of the underlayer such that a remaining portion of the underlayer is protected and forms a second pattern, and such that the first pattern does not expose the substrate located underneath the underlayer; and an image reversal material (IRM) layer located over the partially etched underlayer.
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