FILM FOR THE BACKSIDE OF FLIP-CHIP TYPE SEMICONDUCTOR, DICING TAPE-INTEGRATED FILM FOR THE BACKSIDE OF SEMICONDUCTOR, METHOD OF MANUFACTURING FILM FOR THE BACKSIDE OF FLIP-CHIP TYPE SEMICONDUCTOR, AND SEMICONDUCTOR DEVICE

Invention Application

US20120126380A1 FILM FOR THE BACKSIDE OF FLIP-CHIP TYPE SEMICONDUCTOR, DICING TAPE-INTEGRATED FILM FOR THE BACKSIDE OF SEMICONDUCTOR, METHOD OF MANUFACTURING FILM FOR THE BACKSIDE OF FLIP-CHIP TYPE SEMICONDUCTOR, AND SEMICONDUCTOR DEVICE 有权

Title translation: 片状二极半导体背面的薄膜，半导体背面的双面复合薄膜，片状薄膜半导体背面薄膜的制造方法及半导体器件

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Patent Title: FILM FOR THE BACKSIDE OF FLIP-CHIP TYPE SEMICONDUCTOR, DICING TAPE-INTEGRATED FILM FOR THE BACKSIDE OF SEMICONDUCTOR, METHOD OF MANUFACTURING FILM FOR THE BACKSIDE OF FLIP-CHIP TYPE SEMICONDUCTOR, AND SEMICONDUCTOR DEVICE
Patent Title (中): 片状二极半导体背面的薄膜，半导体背面的双面复合薄膜，片状薄膜半导体背面薄膜的制造方法及半导体器件
Application No.: US13298614

Application Date: 2011-11-17
Publication No.: US20120126380A1

Publication Date: 2012-05-24
Inventor: Daisuke UENDA , Takeshi MATSUMURA , Koichi INOUE , Miki MORITA
Applicant: Daisuke UENDA , Takeshi MATSUMURA , Koichi INOUE , Miki MORITA
Priority: JP2010-258060 20101118
Main IPC: H01L23/552
IPC: H01L23/552 ; B05D5/10 ; B32B27/00

FILM FOR THE BACKSIDE OF FLIP-CHIP TYPE SEMICONDUCTOR, DICING TAPE-INTEGRATED FILM FOR THE BACKSIDE OF SEMICONDUCTOR, METHOD OF MANUFACTURING FILM FOR THE BACKSIDE OF FLIP-CHIP TYPE SEMICONDUCTOR, AND SEMICONDUCTOR DEVICE

Abstract:

An electromagnetic wave shielding layer can be provided on the backside of a semiconductor element that is flip-chip connected to an adherend, and a semiconductor device having the electromagnetic wave shielding layer can be manufactured without deteriorating productivity. The present invention provides a film for the backside of a flip-chip type semiconductor to be formed on the backside of a semiconductor element that is flip-chip connected to an adherend, having an adhesive layer and an electromagnetic wave shielding layer.

Abstract(Chinese):

可以在倒装芯片连接到被粘物的半导体元件的背面设置电磁波屏蔽层，并且可以制造具有电磁波屏蔽层的半导体器件，而不会降低生产率。本发明提供了一种用于倒装芯片型半导体的背面的薄膜，该薄膜将形成在半导体元件的背面，该半导体元件倒装芯片连接到具有粘合剂层和电磁波屏蔽层的被粘物。

Public/Granted literature

US08841757B2 Film for the backside of flip-chip type semiconductor, dicing tape-integrated film for the backside of semiconductor, method of manufacturing film for the backside of flip-chip type semiconductor, and semiconductor device Public/Granted day:2014-09-23

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L23/00	半导体或其他固态器件的零部件（H01L25/00优先）
H01L23/552	.防辐射保护装置，例如光