Invention Application
US20120126870A1 CIRCUIT AND METHOD FOR RAS-ENABLED AND SELF-REGULATED FREQUENCY AND DELAY SENSOR
有权
RAS启用和自调节频率和延迟传感器的电路和方法
- Patent Title: CIRCUIT AND METHOD FOR RAS-ENABLED AND SELF-REGULATED FREQUENCY AND DELAY SENSOR
- Patent Title (中): RAS启用和自调节频率和延迟传感器的电路和方法
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Application No.: US12953828Application Date: 2010-11-24
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Publication No.: US20120126870A1Publication Date: 2012-05-24
- Inventor: Carole D. GRAAS , Keith A. JENKINS , Pascal A. NSAME , Kevin G. STAWIASZ
- Applicant: Carole D. GRAAS , Keith A. JENKINS , Pascal A. NSAME , Kevin G. STAWIASZ
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Main IPC: H03H11/26
- IPC: H03H11/26

Abstract:
Circuits and methods are provided for a reliability, availability and serviceability (RAS) enabled and self-regulated frequency and delay sensor of a semiconductor. A circuit for measuring and compensating for time-dependent performance degradation of an integrated circuit, includes at least one critical functional path of the integrated circuit, and Wearout Isolation Registers (WIR's) connected to boundaries of the critical functional path. The circuit also includes a feedback path connected to the WIR's, and a sensor control module operable to disconnect the critical functional path from preceding and succeeding functional paths of the integrated circuit, connect the critical functional path to the feedback path to form a critical path ring oscillator (CPRO), and enable the CPRO to generate an operating signal. A delay sensor module is operable to measure a frequency of the operating signal to determine and compensate for a degradation of application performance over a lifetime of a semiconductor product.
Public/Granted literature
- US08729920B2 Circuit and method for RAS-enabled and self-regulated frequency and delay sensor Public/Granted day:2014-05-20
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