发明申请
US20120126885A1 DOUBLE GATED 4F2 DRAM CHC CELL AND METHODS OF FABRICATING THE SAME
有权
双环4F2 DRAM CHC电池及其制造方法
- 专利标题： DOUBLE GATED 4F2 DRAM CHC CELL AND METHODS OF FABRICATING THE SAME
- 专利标题（中）： 双环4F2 DRAM CHC电池及其制造方法
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申请号： US12950797申请日： 2010-11-19
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公开(公告)号： US20120126885A1公开(公告)日： 2012-05-24
- 发明人: Werner Juengling , Howard C. Kirsch
- 申请人： Werner Juengling , Howard C. Kirsch
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H03K17/00 ; H01L21/28
摘要：
A semiconductor device is provided that includes a fin having a first gate and a second gate formed on a first sidewall of the fin in a first trench, wherein the first gate is formed above the second gate. The device includes a third gate and a fourth gate formed on a second sidewall of the fin in a second trench, wherein the third gate is formed above the fourth gate. Methods of manufacturing and operating the device are also included. A method of operation may include biasing the first gate and the fourth gate to create a current path across the fin.
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