Invention Application
- Patent Title: STORAGE NODE, PHASE CHANGE MEMORY DEVICE AND METHODS OF OPERATING AND FABRICATING THE SAME
- Patent Title (中): 存储节点，相变存储器件及其操作和制造方法
-
Application No.: US13348333Application Date: 2012-01-11
-
Publication No.: US20120127789A1Publication Date: 2012-05-24
- Inventor: Dong-Seok Suh , Tae-Sang Park
- Applicant: Dong-Seok Suh , Tae-Sang Park
- Priority: KR10-2005-0102499 20051028
- Main IPC: G11C11/00
- IPC: G11C11/00 ; H01L21/8239
Abstract:
A storage node may include a lower electrode, a phase change layer on the lower electrode and an upper electrode on the phase change layer, and the lower electrode and the upper electrode may be composed of thermoelectric materials having a melting point higher than that of the phase change layer, and having different conductivity types. An upper surface of the lower electrode may have a recessed shape, and a lower electrode contact layer may be provided between the lower electrode and the phase change layer.
Public/Granted literature
- US08742514B2 Storage node, phase change memory device and methods of operating and fabricating the same Public/Granted day:2014-06-03
Information query
