摘要:
A storage node, a phase change memory device, and methods of operating and fabricating the same are provided. The storage node may include a lower electrode, a phase change layer on the lower electrode and an upper electrode on the phase change layer, and the lower electrode and the upper electrode may be composed of thermoelectric materials having a melting point higher than that of the phase change layer, and having different conductivity types. An upper surface of the lower electrode may have a recessed shape, and a lower electrode contact layer may be provided between the lower electrode and the phase change layer. A thickness of the phase change layer may be about 100 nm or less, and the lower electrode may be composed of an n-type thermoelectric material, and the upper electrode may be composed of a p-type thermoelectric material, or they may be composed on the contrary to the above. Seeback coefficients of the lower electrode, the phase change layer, and the upper electrode may be different from each other.
摘要:
A storage node may include a lower electrode, a phase change layer on the lower electrode and an upper electrode on the phase change layer, and the lower electrode and the upper electrode may be composed of thermoelectric materials having a melting point higher than that of the phase change layer, and having different conductivity types. An upper surface of the lower electrode may have a recessed shape, and a lower electrode contact layer may be provided between the lower electrode and the phase change layer.
摘要:
A storage node, a phase change memory device, and methods of operating and fabricating the same are provided. The storage node may include a lower electrode, a phase change layer on the lower electrode and an upper electrode on the phase change layer, and the lower electrode and the upper electrode may be composed of thermoelectric materials having a melting point higher than that of the phase change layer, and having different conductivity types. An upper surface of the lower electrode may have a recessed shape, and a lower electrode contact layer may be provided between the lower electrode and the phase change layer. A thickness of the phase change layer may be about 100 nm or less, and the lower electrode may be composed of an n-type thermoelectric material, and the upper electrode may be composed of a p-type thermoelectric material, or they may be composed on the contrary to the above. Seeback coefficients of the lower electrode, the phase change layer, and the upper electrode may be different from each other.
摘要:
A storage node, a phase change memory device, and methods of operating and fabricating the same are provided. The storage node may include a lower electrode, a phase change layer on the lower electrode and an upper electrode on the phase change layer, and the lower electrode and the upper electrode may be composed of thermoelectric materials having a melting point higher than that of the phase change layer, and having different conductivity types. An upper surface of the lower electrode may have a recessed shape, and a lower electrode contact layer may be provided between the lower electrode and the phase change layer. A thickness of the phase change layer may be about 100 nm or less, and the lower electrode may be composed of an n-type thermoelectric material, and the upper electrode may be composed of a p-type thermoelectric material, or they may be composed on the contrary to the above. Seeback coefficients of the lower electrode, the phase change layer, and the upper electrode may be different from each other.
摘要:
A storage node, a phase change memory device, and methods of operating and fabricating the same are provided. The storage node may include a lower electrode, a phase change layer on the lower electrode and an upper electrode on the phase change layer, and the lower electrode and the upper electrode may be composed of thermoelectric materials having a melting point higher than that of the phase change layer, and having different conductivity types. An upper surface of the lower electrode may have a recessed shape, and a lower electrode contact layer may be provided between the lower electrode and the phase change layer. A thickness of the phase change layer may be about 100 nm or less, and the lower electrode may be composed of an n-type thermoelectric material, and the upper electrode may be composed of a p-type thermoelectric material, or they may be composed on the contrary to the above. Seeback coefficients of the lower electrode, the phase change layer, and the upper electrode may be different from each other.
摘要:
A stator module and a motor including the stator module are provided. The motor includes a stator and a stator module. The rotor includes a rotor core and a plurality of rotor poles arranged around a circumference of the rotor core, each generating a magnetic flux. The stator module includes a first stator and a second stator disposed coaxially with each other, each being rotatable in a circumferential direction and each having a coil wound thereon, and a rotation driving unit which controls a rotation of the first stator and the second stator through the same angle in opposite directions, thereby controlling a flux linkage of a rotor according to the rotational angle of each of the first stator and the second stator.
摘要:
A dispersion compensation device and an optical transmission system are capable of simultaneously compensating a dispersion value and dispersion slope in a single-mode optical fiber in a high-speed long-distance optical transmission system and a wavelength division optical transmission system. The dispersion compensation device includes N number of component optical fibers arranged in a serial fashion, N being a positive integer more than one, wherein each of the component optical fiber has a different dispersion value per a unit length, a dispersion slope per a unit length, and a different length.
摘要:
A touch panel and an electronic device having the same are provided. The touch panel includes a first substrate; a second substrate that is spaced apart from the first substrate by a gap, the second substrate including a touch surface; an array of driving electrode pairs that is arranged on the first substrate and the second substrate, and induces an electrical field locally between the first substrate and the second substrate when a driving voltage is applied thereto; and electro-rheological fluid that is filled in the gap between the first substrate and the second substrate, a viscosity of the electro-rheological fluid changing depending on the electrical field induced by the driving electrode pairs. An operating force or a return force is adjusted by controlling an application or release of the driving voltage.
摘要:
A substrate surface processing apparatus is provided. In the substrate surface processing apparatus, a spin chuck holds a substrate thereon by suction, spins the substrate, and moves up and down the substrate. An upper bowl and a lower bowl surround the spin chuck for receiving a processing solution by which the surface of the substrate is processed. An air outlet is positioned under the lower bowl for exhausting air from the upper and lower bowls. A flow separation protrusion is formed within the upper bowl. It separates an air flow around the substrate into an upward air flow and a downward air flow and exhausts the downward air flow through the air outlet.
摘要:
A substrate surface processing apparatus is provided. In the substrate surface processing apparatus, a spin chuck holds a substrate thereon by suction, spins the substrate, and moves up and down the substrate. An upper bowl and a lower bowl surround the spin chuck for receiving a processing solution by which the surface of the substrate is processed. An air outlet is positioned under the lower bowl for exhausting air from the upper and lower bowls. A flow separation protrusion is formed within the upper bowl. It separates an air flow around the substrate into an upward air flow and a downward air flow and exhausts the downward air flow through the air outlet.