Storage node, phase change memory device and methods of operating and fabricating the same

    公开(公告)号:US20090095952A1

    公开(公告)日:2009-04-16

    申请号:US12314310

    申请日:2008-12-08

    IPC分类号: H01L45/00

    摘要: A storage node, a phase change memory device, and methods of operating and fabricating the same are provided. The storage node may include a lower electrode, a phase change layer on the lower electrode and an upper electrode on the phase change layer, and the lower electrode and the upper electrode may be composed of thermoelectric materials having a melting point higher than that of the phase change layer, and having different conductivity types. An upper surface of the lower electrode may have a recessed shape, and a lower electrode contact layer may be provided between the lower electrode and the phase change layer. A thickness of the phase change layer may be about 100 nm or less, and the lower electrode may be composed of an n-type thermoelectric material, and the upper electrode may be composed of a p-type thermoelectric material, or they may be composed on the contrary to the above. Seeback coefficients of the lower electrode, the phase change layer, and the upper electrode may be different from each other.

    STORAGE NODE, PHASE CHANGE MEMORY DEVICE AND METHODS OF OPERATING AND FABRICATING THE SAME
    2.
    发明申请
    STORAGE NODE, PHASE CHANGE MEMORY DEVICE AND METHODS OF OPERATING AND FABRICATING THE SAME 有权
    存储节点,相变存储器件及其操作和制造方法

    公开(公告)号:US20120127789A1

    公开(公告)日:2012-05-24

    申请号:US13348333

    申请日:2012-01-11

    IPC分类号: G11C11/00 H01L21/8239

    摘要: A storage node may include a lower electrode, a phase change layer on the lower electrode and an upper electrode on the phase change layer, and the lower electrode and the upper electrode may be composed of thermoelectric materials having a melting point higher than that of the phase change layer, and having different conductivity types. An upper surface of the lower electrode may have a recessed shape, and a lower electrode contact layer may be provided between the lower electrode and the phase change layer.

    摘要翻译: 存储节点可以包括下电极,下电极上的相变层和相变层上的上电极,下电极和上电极可以由熔点高于 相变层,并具有不同的导电类型。 下电极的上表面可以具有凹陷形状,并且下电极接触层可以设置在下电极和相变层之间。

    Storage node, phase change memory device and methods of operating and fabricating the same
    3.
    发明授权
    Storage node, phase change memory device and methods of operating and fabricating the same 有权
    存储节点,相变存储器件及其操作和制造方法

    公开(公告)号:US08120004B2

    公开(公告)日:2012-02-21

    申请号:US12314310

    申请日:2008-12-08

    IPC分类号: H01L29/00

    摘要: A storage node, a phase change memory device, and methods of operating and fabricating the same are provided. The storage node may include a lower electrode, a phase change layer on the lower electrode and an upper electrode on the phase change layer, and the lower electrode and the upper electrode may be composed of thermoelectric materials having a melting point higher than that of the phase change layer, and having different conductivity types. An upper surface of the lower electrode may have a recessed shape, and a lower electrode contact layer may be provided between the lower electrode and the phase change layer. A thickness of the phase change layer may be about 100 nm or less, and the lower electrode may be composed of an n-type thermoelectric material, and the upper electrode may be composed of a p-type thermoelectric material, or they may be composed on the contrary to the above. Seeback coefficients of the lower electrode, the phase change layer, and the upper electrode may be different from each other.

    摘要翻译: 提供存储节点,相变存储器件及其操作和制造方法。 存储节点可以包括下电极,下电极上的相变层和相变层上的上电极,下电极和上电极可以由熔点高于 相变层,并具有不同的导电类型。 下电极的上表面可以具有凹陷形状,并且下电极接触层可以设置在下电极和相变层之间。 相变层的厚度可以为约100nm以下,下部电极可以由n型热电材料构成,上部电极可以由p型热电材料构成,也可以组成 与上述相反。 下电极,相变层和上电极的回吸系数可以彼此不同。

    Storage node, phase change memory device and methods of operating and fabricating the same
    4.
    发明授权
    Storage node, phase change memory device and methods of operating and fabricating the same 有权
    存储节点,相变存储器件及其操作和制造方法

    公开(公告)号:US07476892B2

    公开(公告)日:2009-01-13

    申请号:US11589056

    申请日:2006-10-30

    摘要: A storage node, a phase change memory device, and methods of operating and fabricating the same are provided. The storage node may include a lower electrode, a phase change layer on the lower electrode and an upper electrode on the phase change layer, and the lower electrode and the upper electrode may be composed of thermoelectric materials having a melting point higher than that of the phase change layer, and having different conductivity types. An upper surface of the lower electrode may have a recessed shape, and a lower electrode contact layer may be provided between the lower electrode and the phase change layer. A thickness of the phase change layer may be about 100 nm or less, and the lower electrode may be composed of an n-type thermoelectric material, and the upper electrode may be composed of a p-type thermoelectric material, or they may be composed on the contrary to the above. Seeback coefficients of the lower electrode, the phase change layer, and the upper electrode may be different from each other.

    摘要翻译: 提供存储节点,相变存储器件及其操作和制造方法。 存储节点可以包括下电极,下电极上的相变层和相变层上的上电极,下电极和上电极可以由熔点高于 相变层,并具有不同的导电类型。 下电极的上表面可以具有凹陷形状,并且下电极接触层可以设置在下电极和相变层之间。 相变层的厚度可以为约100nm以下,下部电极可以由n型热电材料构成,上部电极可以由p型热电材料构成,也可以组成 与上述相反。 下电极,相变层和上电极的回吸系数可以彼此不同。

    Storage node, phase change memory device and methods of operating and fabricating the same
    5.
    发明申请
    Storage node, phase change memory device and methods of operating and fabricating the same 有权
    存储节点,相变存储器件及其操作和制造方法

    公开(公告)号:US20070108488A1

    公开(公告)日:2007-05-17

    申请号:US11589056

    申请日:2006-10-30

    IPC分类号: H01L29/94

    摘要: A storage node, a phase change memory device, and methods of operating and fabricating the same are provided. The storage node may include a lower electrode, a phase change layer on the lower electrode and an upper electrode on the phase change layer, and the lower electrode and the upper electrode may be composed of thermoelectric materials having a melting point higher than that of the phase change layer, and having different conductivity types. An upper surface of the lower electrode may have a recessed shape, and a lower electrode contact layer may be provided between the lower electrode and the phase change layer. A thickness of the phase change layer may be about 100 nm or less, and the lower electrode may be composed of an n-type thermoelectric material, and the upper electrode may be composed of a p-type thermoelectric material, or they may be composed on the contrary to the above. Seeback coefficients of the lower electrode, the phase change layer, and the upper electrode may be different from each other.

    摘要翻译: 提供存储节点,相变存储器件及其操作和制造方法。 存储节点可以包括下电极,下电极上的相变层和相变层上的上电极,下电极和上电极可以由熔点高于 相变层,并具有不同的导电类型。 下电极的上表面可以具有凹陷形状,并且下电极接触层可以设置在下电极和相变层之间。 相变层的厚度可以为约100nm以下,下部电极可以由n型热电材料构成,上部电极可以由p型热电材料构成,也可以组成 与上述相反。 下电极,相变层和上电极的回吸系数可以彼此不同。

    Stator module and motor including the same
    6.
    发明授权
    Stator module and motor including the same 有权
    定子模块和电机包括相同

    公开(公告)号:US09209671B2

    公开(公告)日:2015-12-08

    申请号:US13590691

    申请日:2012-08-21

    IPC分类号: H02K23/44 H02K21/16

    摘要: A stator module and a motor including the stator module are provided. The motor includes a stator and a stator module. The rotor includes a rotor core and a plurality of rotor poles arranged around a circumference of the rotor core, each generating a magnetic flux. The stator module includes a first stator and a second stator disposed coaxially with each other, each being rotatable in a circumferential direction and each having a coil wound thereon, and a rotation driving unit which controls a rotation of the first stator and the second stator through the same angle in opposite directions, thereby controlling a flux linkage of a rotor according to the rotational angle of each of the first stator and the second stator.

    摘要翻译: 提供了包括定子模块的定子模块和电动机。 电动机包括定子和定子模块。 转子包括转子芯和围绕转子芯的圆周设置的多个转子磁极,每个转子磁极产生磁通量。 定子模块包括彼此同轴设置的第一定子和第二定子,每个定子可沿圆周方向旋转,并且每个都具有卷绕在其上的线圈,以及旋转驱动单元,其控制第一定子和第二定子的旋转通过 在相反方向上具有相同的角度,从而根据第一定子和第二定子中的每一个的旋转角来控制转子的磁链。

    Touch panel and electronic device including the same
    8.
    发明授权
    Touch panel and electronic device including the same 有权
    触摸面板和电子设备包括相同

    公开(公告)号:US09189066B2

    公开(公告)日:2015-11-17

    申请号:US12889800

    申请日:2010-09-24

    IPC分类号: G06F3/041 G06F3/01

    CPC分类号: G06F3/016

    摘要: A touch panel and an electronic device having the same are provided. The touch panel includes a first substrate; a second substrate that is spaced apart from the first substrate by a gap, the second substrate including a touch surface; an array of driving electrode pairs that is arranged on the first substrate and the second substrate, and induces an electrical field locally between the first substrate and the second substrate when a driving voltage is applied thereto; and electro-rheological fluid that is filled in the gap between the first substrate and the second substrate, a viscosity of the electro-rheological fluid changing depending on the electrical field induced by the driving electrode pairs. An operating force or a return force is adjusted by controlling an application or release of the driving voltage.

    摘要翻译: 提供了触摸面板和具有该触摸面板的电子设备。 触摸面板包括第一基板; 第二基板,其通过间隙与所述第一基板间隔开,所述第二基板包括触摸表面; 布置在所述第一基板和所述第二基板上的驱动电极对的阵列,并且当向其施加驱动电压时,在所述第一基板和所述第二基板之间局部引发电场; 以及填充在第一基板和第二基板之间的间隙中的电流变流体,电流变流体的粘度根据由驱动电极对感应的电场而变化。 通过控制驱动电压的应用或释放来调节操作力或返回力。

    Apparatus for processing surface of substrate
    9.
    发明申请
    Apparatus for processing surface of substrate 失效
    用于处理衬底表面的设备

    公开(公告)号:US20050284362A1

    公开(公告)日:2005-12-29

    申请号:US11157522

    申请日:2005-06-21

    CPC分类号: H01L21/68735 H01L21/6715

    摘要: A substrate surface processing apparatus is provided. In the substrate surface processing apparatus, a spin chuck holds a substrate thereon by suction, spins the substrate, and moves up and down the substrate. An upper bowl and a lower bowl surround the spin chuck for receiving a processing solution by which the surface of the substrate is processed. An air outlet is positioned under the lower bowl for exhausting air from the upper and lower bowls. A flow separation protrusion is formed within the upper bowl. It separates an air flow around the substrate into an upward air flow and a downward air flow and exhausts the downward air flow through the air outlet.

    摘要翻译: 提供了一种基板表面处理装置。 在基板表面处理装置中,旋转卡盘通过抽吸将基板保持在其上,旋转基板,并且在基板上上下移动。 上碗和下碗围绕旋转卡盘,用于接收处理溶液,通过该处理溶液处理基材的表面。 空气出口位于下碗下面,用于从上碗和下碗排出空气。 在上碗中形成流动分离突起。 它将基板周围的空气流分离成向上的空气流和向下的空气流,并排出通过出气口的向下空气流。

    Apparatus for processing surface of substrate
    10.
    发明授权
    Apparatus for processing surface of substrate 失效
    用于处理衬底表面的设备

    公开(公告)号:US07582163B2

    公开(公告)日:2009-09-01

    申请号:US11157522

    申请日:2005-06-21

    IPC分类号: B05C11/02 B05B1/28 B05B3/00

    CPC分类号: H01L21/68735 H01L21/6715

    摘要: A substrate surface processing apparatus is provided. In the substrate surface processing apparatus, a spin chuck holds a substrate thereon by suction, spins the substrate, and moves up and down the substrate. An upper bowl and a lower bowl surround the spin chuck for receiving a processing solution by which the surface of the substrate is processed. An air outlet is positioned under the lower bowl for exhausting air from the upper and lower bowls. A flow separation protrusion is formed within the upper bowl. It separates an air flow around the substrate into an upward air flow and a downward air flow and exhausts the downward air flow through the air outlet.

    摘要翻译: 提供了一种基板表面处理装置。 在基板表面处理装置中,旋转卡盘通过抽吸将基板保持在其上,旋转基板,并且在基板上上下移动。 上碗和下碗围绕旋转卡盘,用于接收处理溶液,通过该处理溶液处理基材的表面。 空气出口位于下碗下面,用于从上碗和下碗排出空气。 在上碗中形成流动分离突起。 它将基板周围的空气流分离成向上的空气流和向下的空气流,并排出通过出气口的向下空气流。