发明申请
- 专利标题： SEMICONDUCTOR COMPONENT WITH HIGH BREAKTHROUGH TENSION AND LOW FORWARD RESISTANCE
- 专利标题（中）： 具有高突起张力和低前向电阻的半导体元件
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申请号： US13367909申请日： 2012-02-07
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公开(公告)号： US20120132956A1公开(公告)日： 2012-05-31
- 发明人: Frank Dieter Pfirsch , Armin Willmeroth , Anton Mauder , Stefan Sedlmaier
- 申请人： Frank Dieter Pfirsch , Armin Willmeroth , Anton Mauder , Stefan Sedlmaier
- 申请人地址： DE Neubiberg
- 专利权人： Infineon Technologies AG
- 当前专利权人： Infineon Technologies AG
- 当前专利权人地址： DE Neubiberg
- 优先权： DE102005035153.0 20050727; DE102005039331.4 20050819
- 主分类号： H01L29/739
- IPC分类号： H01L29/739 ; H01L29/78
摘要：
A semiconductor component having a semiconductor body is disclosed. In one embodiment, the semiconductor component includes a drift zone of a first conductivity type, a drift control zone composed of a semiconductor material which is arranged adjacent to the drift zone at least in places, a dielectric which is arranged between the drift zone and the drift control zone at least in places. A quotient of the net dopant charge of the drift control zone, in an area adjacent to the accumulation dielectric and the drift zone, divided by the area of the dielectric arranged between the drift control zone and the drift zone is less than the breakdown charge of the semiconductor material in the drift control zone.
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