Invention Application
US20120138897A1 SOURCE/DRAIN STRESSOR HAVING ENHANCED CARRIER MOBILITY AND METHOD FOR MANUFACTURING SAME
有权
具有增强载体移动性的源/排水压力机及其制造方法
- Patent Title: SOURCE/DRAIN STRESSOR HAVING ENHANCED CARRIER MOBILITY AND METHOD FOR MANUFACTURING SAME
- Patent Title (中): 具有增强载体移动性的源/排水压力机及其制造方法
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Application No.: US12960237Application Date: 2010-12-03
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Publication No.: US20120138897A1Publication Date: 2012-06-07
- Inventor: Chin-Hsiang Lin , Jeff J. Xu , Pang-Yen Tsai
- Applicant: Chin-Hsiang Lin , Jeff J. Xu , Pang-Yen Tsai
- Applicant Address: TW Hsin-Chu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsin-Chu
- Main IPC: H01L29/165
- IPC: H01L29/165 ; H01L21/205
Abstract:
Various source/drain stressors that can enhance carrier mobility, and methods for manufacturing the same, are disclosed. An exemplary source/drain stressor includes a seed layer of a first material disposed over a substrate of a second material, the first material being different than the second material; a relaxed epitaxial layer disposed over the seed layer; and an epitaxial layer disposed over the relaxed epitaxial layer.
Public/Granted literature
- US08629426B2 Source/drain stressor having enhanced carrier mobility manufacturing same Public/Granted day:2014-01-14
Information query
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