Disclosed are methods for manufacturing semiconductor devices and the devices thus obtained. In one embodiment, the method comprises obtaining a semiconductor substrate comprising a germanium region doped with n-type dopants at a first doping level and forming an interfacial silicon layer overlying the germanium region, where the interfacial silicon layer is doped with n-type dopants at a second doping level and has a thickness higher than a critical thickness of silicon on germanium, such that the interfacial layer is at least partially relaxed. The method further includes forming over the interfacial silicon layer a layer of material having an electrical resistivity smaller than 1×10−2 Ωcm, thereby forming an electrical contact between the germanium region and the layer of material, wherein the electrical contact has a specific contact resistivity below 10−4 Ωcm2.