Invention Application
- Patent Title: POWER STORAGE DEVICE
- Patent Title (中): 电源存储设备
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Application No.: US13307045Application Date: 2011-11-30
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Publication No.: US20120141866A1Publication Date: 2012-06-07
- Inventor: Kazutaka KURIKI , Nobuhiro Inoue , Kiyofumi Ogino
- Applicant: Kazutaka KURIKI , Nobuhiro Inoue , Kiyofumi Ogino
- Applicant Address: JP Atsugi-shi
- Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Current Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Current Assignee Address: JP Atsugi-shi
- Priority: JP2010-272903 20101207
- Main IPC: H01M4/66
- IPC: H01M4/66 ; H01M10/02 ; H01G9/032

Abstract:
A power storage device which has improved performance such as higher discharge capacity and in which deterioration due to peeling or the like of an active material layer is less likely to be caused is provided. In an electrode for the power storage device, phosphorus-doped amorphous silicon is used for the active material layer over a current collector as a material that can be alloyed with lithium, and niobium oxide is deposited over the active material layer as a layer containing niobium. Accordingly, the capacity of the power storage device can be increased and the cycle characteristics and the charge-discharge efficiency can be improved.
Public/Granted literature
- US09362556B2 Power storage device Public/Granted day:2016-06-07
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