发明申请
- 专利标题： BASIC COMPOUND, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS
- 专利标题（中）： 基本化合物，化学稳定组合物和方法
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申请号： US13311192申请日： 2011-12-05
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公开(公告)号： US20120141938A1公开(公告)日： 2012-06-07
- 发明人: Jun Hatakeyama , Masayoshi Sagehashi , Takeru Watanabe
- 申请人： Jun Hatakeyama , Masayoshi Sagehashi , Takeru Watanabe
- 申请人地址： JP Tokyo
- 专利权人： SHIN-ETSU CHEMICAL CO., LTD.
- 当前专利权人： SHIN-ETSU CHEMICAL CO., LTD.
- 当前专利权人地址： JP Tokyo
- 优先权： JP2010-272510 20101207; JP2011-177574 20110815
- 主分类号： G03F7/20
- IPC分类号： G03F7/20 ; C07C317/48 ; G03F7/025 ; C07D209/34 ; G03F7/027 ; C07C229/46 ; C07C229/40
摘要：
A chemically amplified resist composition comprising a base polymer, an acid generator, and an amine quencher in the form of a β-alanine, γ-aminobutyric acid or 5-aminovaleric acid derivative having an acid labile group-substituted carboxyl group has a high contrast of alkaline dissolution rate before and after exposure and forms a pattern of good profile at a high resolution, minimal roughness and wide focus margin.