Invention Application
US20120142121A1 HYDROCHLORIC ACID ETCH AND LOW TEMPERATURE EPITAXY IN A SINGLE CHAMBER FOR RAISED SOURCE-DRAIN FABRICATION
有权
在一个单一的室中的氢氯酸盐和低温外延，用于提高源水排放
- Patent Title: HYDROCHLORIC ACID ETCH AND LOW TEMPERATURE EPITAXY IN A SINGLE CHAMBER FOR RAISED SOURCE-DRAIN FABRICATION
- Patent Title (中): 在一个单一的室中的氢氯酸盐和低温外延，用于提高源水排放
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Application No.: US12960736Application Date: 2010-12-06
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Publication No.: US20120142121A1Publication Date: 2012-06-07
- Inventor: Prasanna Khare , Nicolas Loubet , Qing Liu
- Applicant: Prasanna Khare , Nicolas Loubet , Qing Liu
- Applicant Address: US TX Coppell
- Assignee: STMICROELECTRONICS, INC.
- Current Assignee: STMICROELECTRONICS, INC.
- Current Assignee Address: US TX Coppell
- Main IPC: H01L21/306
- IPC: H01L21/306
Abstract:
A raised source-drain structure is formed using a process wherein a semiconductor structure is received in a process chamber that is adapted to support both an etching process and an epitaxial growth process. This semiconductor structure includes a source region and a drain region, wherein the source and drain regions each include a damaged surface layer. The process chamber is controlled to set a desired atmosphere and set a desired temperature. At the desired atmosphere and temperature, the etching process of process chamber is used to remove the damaged surface layers from the source and drain regions and expose an interface surface. Without releasing the desired atmosphere and while maintaining the desired temperature, the epitaxial growth process of the process chamber is used to grow, from the exposed interface surface, a raised region above each of the source and drain regions.
Public/Granted literature
- US08187975B1 Hydrochloric acid etch and low temperature epitaxy in a single chamber for raised source-drain fabrication Public/Granted day:2012-05-29
Information query
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