发明申请
- 专利标题： STRUCTURE AND METHOD FOR OVERLAY MARKS
- 专利标题（中）： 覆盖标志的结构与方法
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申请号： US13293650申请日： 2011-11-10
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公开(公告)号： US20120146159A1公开(公告)日： 2012-06-14
- 发明人: Hsien-Cheng WANG , Ming-Chang WEN , Chun-Kuang CHEN , Yao-Ching KU
- 申请人： Hsien-Cheng WANG , Ming-Chang WEN , Chun-Kuang CHEN , Yao-Ching KU
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW Hsinchu
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/66 ; H01L21/336
摘要：
The overlay mark and method for making the same are described. In one embodiment, a semiconductor overlay structure includes gate stack structures formed on the semiconductor substrate and configured as an overlay mark, and a doped semiconductor substrate disposed on both sides of the gate stack structure that includes at least as much dopant as the semiconductor substrate adjacent to the gate stack structure in a device region. The doped semiconductor substrate is formed by at least three ion implantation steps.
公开/授权文献
- US09543406B2 Structure and method for overlay marks 公开/授权日：2017-01-10
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