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1.发明授权Cross quadrupole double lithography method and apparatus for semiconductor device fabrication using two apertures 有权用于使用两个孔的半导体器件制造的交叉四极双光刻方法和装置公开(公告)号：US08416393B2
公开(公告)日：2013-04-09
申请号：US12417090
申请日：2009-04-02
申请人： Hsien-Cheng Wang , Hung Chang Hsieh , Shih-Che Wang , Ping Chieh Wu , Wen-Chun Huang , Ming-Chang Wen
发明人： Hsien-Cheng Wang , Hung Chang Hsieh , Shih-Che Wang , Ping Chieh Wu , Wen-Chun Huang , Ming-Chang Wen
IPC分类号： G03B27/72
CPC分类号： G03B27/523 , G03B27/54 , G03F7/701 , H01L21/302
摘要： Provided is a lithography system operation to include a first aperture or a second aperture. Each of the first and second apertures has two pairs of radiation-transmitting regions where one pair of radiation-transmitting regions are larger than a second pair. For an aperture, each pair of radiation-transmitting regions are on different diametrical axis. In an embodiment, one aperture is used for x-dipole illumination and the second aperture is used for y-dipole illumination.
摘要翻译： 提供了包括第一孔或第二孔的光刻系统操作。 第一和第二孔中的每一个具有两对辐射透射区域，其中一对辐射透射区域大于第二对。 对于孔径，每对辐射透射区域在不同的直径轴线上。 在一个实施例中，一个孔用于x-偶极照明，第二个孔用于y-偶极照明。
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2.发明申请MEDICATION DISPENSING SYSTEM AND METHOD AND NON-STATIONARY COMPUTER READABLE RECORDING MEDIUM 审中-公开药物分配系统和方法以及非静态计算机可读记录介质公开(公告)号：US20160354284A1
公开(公告)日：2016-12-08
申请号：US14973755
申请日：2015-12-18
申请人： Yu-Cing Liou , Ci-Jyun Liang , Cheng-Hsuan Yang , Ming-Chang Wen , Chung-Nan Tsai , Yi-Chun Lu , Ya-Cherng Chu , Chih-Hung Huang
发明人： Yu-Cing Liou , Ci-Jyun Liang , Cheng-Hsuan Yang , Ming-Chang Wen , Chung-Nan Tsai , Yi-Chun Lu , Ya-Cherng Chu , Chih-Hung Huang
CPC分类号： A61J7/04 , A61J1/035 , A61J7/0418 , A61J7/0481
摘要： A medication dispensing system, method and non-stationary computer readable recording medium thereof are provided. The medication dispensing system includes a medication dispenser adapted to accommodate a plurality of medicine units for dispensation. The medication dispenser includes a user interface unit, an identifier, and a processor. The identifier is adapted to communicate with an identifiable unit. The processor is coupled to the user interface unit and the identifier. The processor is configured for obtaining an identification data recorded in the identifiable unit through the identifier and identifying a user identity related to the medicine units based on the identification data, receiving a first command through the user interface unit, wherein the first command includes a daily routine schedule, scheduling a medication schedule according to the daily routine schedule after the user identity is identified, and executing a medicine outputting operation and a reminding operation according to the medication schedule.
摘要翻译： 提供了药物分配系统，方法和非固定的计算机可读记录介质。 药物分配系统包括适于容纳用于分配的多个药物单元的药物分配器。 药物分配器包括用户界面单元，标识符和处理器。 标识符适于与可识别单元通信。 处理器耦合到用户接口单元和标识符。 所述处理器被配置为通过所述标识符获得记录在所述可识别单元中的识别数据，并且基于所述识别数据识别与所述药物单元相关的用户身份，通过所述用户界面单元接收第一命令，其中所述第一命令包括每日 例行程序，在识别出用户身份之后，根据日常日程进行调度药物调度，根据药物进度执行药品输出操作和提醒操作。
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公开(公告)号：US20120146159A1
公开(公告)日：2012-06-14
申请号：US13293650
申请日：2011-11-10
IPC分类号： H01L29/78 , H01L21/66 , H01L21/336
CPC分类号： H01L22/32 , G03F7/70633 , H01L21/265 , H01L29/517 , H01L29/66545
摘要： The overlay mark and method for making the same are described. In one embodiment, a semiconductor overlay structure includes gate stack structures formed on the semiconductor substrate and configured as an overlay mark, and a doped semiconductor substrate disposed on both sides of the gate stack structure that includes at least as much dopant as the semiconductor substrate adjacent to the gate stack structure in a device region. The doped semiconductor substrate is formed by at least three ion implantation steps.
摘要翻译： 对覆盖标记及其制作方法进行说明。 在一个实施例中，半导体覆盖结构包括形成在半导体衬底上并被配置为覆盖标记的栅极叠层结构，以及设置在栅叠层结构两侧的掺杂半导体衬底，其至少包括与半导体衬底相邻的掺杂剂 到设备区域中的栅极堆栈结构。 掺杂半导体衬底通过至少三个离子注入步骤形成。
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公开(公告)号：US20100255679A1
公开(公告)日：2010-10-07
申请号：US12417090
申请日：2009-04-02
申请人： Hsien-Cheng Wang , Hung Chang Hsieh , Shih-Che Wang , Ping Chieh Wu , Wen-Chun Huang , Ming-Chang Wen
发明人： Hsien-Cheng Wang , Hung Chang Hsieh , Shih-Che Wang , Ping Chieh Wu , Wen-Chun Huang , Ming-Chang Wen
IPC分类号： H01L21/461 , G03F7/20 , G03B27/54
CPC分类号： G03B27/523 , G03B27/54 , G03F7/701 , H01L21/302
摘要： Provided is a lithography system operation to include a first aperture or a second aperture. Each of the first and second apertures has two pairs of radiation-transmitting regions where one pair of radiation-transmitting regions are larger than a second pair. For an aperture, each pair of radiation-transmitting regions are on different diametrical axis. In an embodiment, one aperture is used for x-dipole illumination and the second aperture is used for y-dipole illumination.
摘要翻译： 提供了包括第一孔或第二孔的光刻系统操作。 第一和第二孔中的每一个具有两对辐射透射区域，其中一对辐射透射区域大于第二对。 对于孔径，每对辐射透射区域在不同的直径轴线上。 在一个实施例中，一个孔用于x-偶极照明，第二个孔用于y-偶极照明。
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公开(公告)号：US09543406B2
公开(公告)日：2017-01-10
申请号：US13293650
申请日：2011-11-10
CPC分类号： H01L22/32 , G03F7/70633 , H01L21/265 , H01L29/517 , H01L29/66545
摘要： The overlay mark and method for making the same are described. In one embodiment, a semiconductor overlay structure includes gate stack structures formed on the semiconductor substrate and configured as an overlay mark, and a doped semiconductor substrate disposed on both sides of the gate stack structure that includes at least as much dopant as the semiconductor substrate adjacent to the gate stack structure in a device region. The doped semiconductor substrate is formed by at least three ion implantation steps.
摘要翻译： 对覆盖标记及其制作方法进行说明。 在一个实施例中，半导体覆盖结构包括形成在半导体衬底上并被配置为覆盖标记的栅极叠层结构，以及设置在栅叠层结构两侧的掺杂半导体衬底，其至少包括与半导体衬底相邻的掺杂剂 到设备区域中的栅极堆栈结构。 掺杂半导体衬底通过至少三个离子注入步骤形成。
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公开(公告)号：US09000525B2
公开(公告)日：2015-04-07
申请号：US12783200
申请日：2010-05-19
IPC分类号： H01L21/70 , H01L21/8234 , H01L29/66
CPC分类号： H01L27/088 , H01L21/823418 , H01L21/823456 , H01L21/823493 , H01L29/4916 , H01L29/51 , H01L29/66545 , H01L29/66575 , H01L29/6659
摘要： The alignment mark and method for making the same are described. In one embodiment, a semiconductor structure includes a plurality of gate stacks formed on the semiconductor substrate and configured as an alignment mark; doped features formed in the semiconductor substrate and disposed on sides of each of the plurality of gate stacks; and channel regions underlying the plurality of gate stacks and free of channel dopant.
摘要翻译： 对准标记及其制作方法进行说明。 在一个实施例中，半导体结构包括形成在半导体衬底上并被配置为对准标记的多个栅极叠层; 掺杂特征形成在所述半导体衬底中并且设置在所述多个栅极堆叠中的每一个的侧面上; 以及在多个栅极堆叠下面并且没有沟道掺杂剂的沟道区域。
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公开(公告)号：US20110284966A1
公开(公告)日：2011-11-24
申请号：US12783200
申请日：2010-05-19
IPC分类号： H01L27/088 , H01L21/336
CPC分类号： H01L27/088 , H01L21/823418 , H01L21/823456 , H01L21/823493 , H01L29/4916 , H01L29/51 , H01L29/66545 , H01L29/66575 , H01L29/6659
摘要： The alignment mark and method for making the same are described. In one embodiment, a semiconductor structure includes a plurality of gate stacks formed on the semiconductor substrate and configured as an alignment mark; doped features formed in the semiconductor substrate and disposed on sides of each of the plurality of gate stacks; and channel regions underlying the plurality of gate stacks and free of channel dopant.
摘要翻译： 对准标记及其制作方法进行说明。 在一个实施例中，半导体结构包括形成在半导体衬底上并被配置为对准标记的多个栅叠层; 掺杂特征形成在所述半导体衬底中并且设置在所述多个栅极堆叠中的每一个的侧面上; 以及在多个栅极堆叠下面并且没有沟道掺杂剂的沟道区域。
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公开(公告)号：US07649024B2
公开(公告)日：2010-01-19
申请号：US11221811
申请日：2005-09-09
申请人： Chia-Chen Li , Mu-Jen Young , Ruey-Fu Shih , Ming-Chang Wen , Meu-Hui Chang
发明人： Chia-Chen Li , Mu-Jen Young , Ruey-Fu Shih , Ming-Chang Wen , Meu-Hui Chang
IPC分类号： B01F3/12 , C10M169/04
CPC分类号： B01J14/005 , B01J8/10 , C01G9/02 , C01G49/06 , C01P2004/52 , C01P2004/84 , C01P2006/12 , C01P2006/22 , C09C1/00 , C09C1/043 , C09C1/24 , C09C3/06 , Y10S516/924 , Y10S977/773 , Y10S977/786 , Y10S977/787
摘要： The present invention discloses a process for preparing a hydrophobic fluid containing metal oxide nanoparticles dispersed therein such as heat transfer fluids or lubricant fluids, including introducing an alkaline aqueous solution (aqueous phase) and an organic solution of an organic acid metal salt (hydrophobic phase) into a rotating packed bed, the two solutions flowing radially through the rotating packed bed under a great centrifugal force, so that the aqueous phase and the hydrophobic phase contact with each other, reactants in the two phases undergo reactions at the interface of the two phases rapidly, and thus metal oxide nanoparticles are formed. The metal oxide nanoparticles stably dispersed in the hydrophobic phase, which is nanofluid.
摘要翻译： 本发明公开了一种制备含有分散在其中的金属氧化物纳米颗粒如疏水性流体或润滑剂流体的疏水性流体的方法，包括引入碱性水溶液（水相）和有机酸金属盐（疏水相）的有机溶液， 在旋转的填充床中，两种溶液在大的离心力下径向通过旋转的填充床，使得水相和疏水相彼此接触，两相中的反应物在两相的界面处发生反应 迅速形成金属氧化物纳米粒子。 金属氧化物纳米颗粒稳定地分散在疏水相中，其为纳米流体。
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公开(公告)号：US20060247322A1
公开(公告)日：2006-11-02
申请号：US11221811
申请日：2005-09-09
申请人： Chia-Chen Li , Mu-Jen Young , Ruey-Fu Shih , Ming-Chang Wen , Meu-Hui Chang
发明人： Chia-Chen Li , Mu-Jen Young , Ruey-Fu Shih , Ming-Chang Wen , Meu-Hui Chang
CPC分类号： B01J14/005 , B01J8/10 , C01G9/02 , C01G49/06 , C01P2004/52 , C01P2004/84 , C01P2006/12 , C01P2006/22 , C09C1/00 , C09C1/043 , C09C1/24 , C09C3/06 , Y10S516/924 , Y10S977/773 , Y10S977/786 , Y10S977/787
摘要： The present invention discloses a process for preparing a hydrophobic fluid containing metal oxide nanoparticles dispersed therein such as heat transfer fluids or lubricant fluids, including introducing an alkaline aqueous solution (aqueous phase) and an organic solution of an organic acid metal salt (hydrophobic phase) into a rotating packed bed, the two solutions flowing radially through the rotating packed bed under a great centrifugal force, so that the aqueous phase and the hydrophobic phase contact with each other, reactants in the two phases undergo reactions at the interface of the two phases rapidly, and thus metal oxide nanoparticles are formed. The metal oxide nanoparticles stably dispersed in the hydrophobic phase, which is nanofluid.
摘要翻译： 本发明公开了一种制备含有分散在其中的金属氧化物纳米颗粒如疏水性流体或润滑剂流体的疏水性流体的方法，包括引入碱性水溶液（水相）和有机酸金属盐（疏水相）的有机溶液， 在旋转的填充床中，两种溶液在大的离心力下径向通过旋转的填充床，使得水相和疏水相彼此接触，两相中的反应物在两相的界面处发生反应 迅速形成金属氧化物纳米粒子。 金属氧化物纳米颗粒稳定地分散在疏水相中，其为纳米流体。
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