发明申请
- 专利标题: Method Of Manufacturing Nanoimprint Stamp
- 专利标题(中): 制造纳米印记邮票的方法
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申请号: US13170766申请日: 2011-06-28
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公开(公告)号: US20120152887A1公开(公告)日: 2012-06-21
- 发明人: Byung-kyu Lee , Du-hyun Lee , Woong Ko
- 申请人: Byung-kyu Lee , Du-hyun Lee , Woong Ko
- 申请人地址: KR Suwon-si
- 专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址: KR Suwon-si
- 优先权: KR10-2010-0128624 20101215
- 主分类号: B29C33/42
- IPC分类号: B29C33/42 ; B82Y30/00
摘要:
Methods of manufacturing a nanoimprint stamp are provided. The method may include forming a pattern on a surface of a master substrate, depositing an etch barrier layer on a surface of a stamp substrate, coating a photoresist on one of the surfaces of the master substrate and the stamp substrate on which an etch barrier layer is formed, forming a photoresist pattern by pressing the master substrate against the stamp substrate, forming a hard mask by etching the etch barrier layer using the photoresist pattern, and etching the stamp substrate using the hard mask as an etch mask.
公开/授权文献
- US08603349B2 Method of manufacturing nanoimprint stamp 公开/授权日:2013-12-10
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