发明申请
- 专利标题： III-V SEMICONDUCTOR STRUCTURES INCLUDING ALUMINUM-SILICON NITRIDE PASSIVATION
- 专利标题（中）： III-V半导体结构，包括氮化硅钝化
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申请号： US13380104申请日： 2010-06-28
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公开(公告)号： US20120153301A1公开(公告)日： 2012-06-21
- 发明人: James R. Shealy , Richard Brown
- 申请人： James R. Shealy , Richard Brown
- 申请人地址： US NY Ithaca
- 专利权人： CORNELL UNIVERSITY
- 当前专利权人： CORNELL UNIVERSITY
- 当前专利权人地址： US NY Ithaca
- 国际申请： PCT/US10/40129 WO 20100628
- 主分类号： H01L29/16
- IPC分类号： H01L29/16 ; H01L29/778 ; H01L29/78 ; H01L29/20
摘要：
A semiconductor structure includes a semiconductor layer that is passivated with an aluminum-silicon nitride layer. When the semiconductor layer in particular comprises a III-V semiconductor material such as a group III nitride semiconductor material or a gallium nitride semiconductor material, the aluminum-silicon nitride material provides a superior passivation in comparison with a silicon nitride material.
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