利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

108 条记录 (耗时 0.018 秒)

    Chemical vapor deposition process for aluminum silicon nitride
    1.
    发明授权
    Chemical vapor deposition process for aluminum silicon nitride 有权
    氮化硅铝化学气相沉积工艺

    公开(公告)号：US08791034B2

    公开(公告)日：2014-07-29

    申请号：US13380144

    申请日：2010-06-28

    申请人： James R. Shealy ,  Richard Brown

    发明人： James R. Shealy ,  Richard Brown

    IPC分类号： H01L21/318 ,  H01L21/443

    CPC分类号： H01L21/318 ,  C23C16/34 ,  H01L21/02145 ,  H01L21/02271

    摘要： A chemical vapor deposition method for forming an aluminum-silicon nitride layer upon a substrate uses an aluminum precursor, a silicon precursor and a nitrogen precursor under chemical vapor deposition conditions to deposit the aluminum-silicon nitride layer upon the substrate. The aluminum-silicon nitride layer has an index of refraction interposed between silicon nitride and aluminum nitride. The aluminum-silicon nitride layer also has a bandgap from about 4.5 to about 6 eV and a permittivity from about 6×10^-11 to about 8×10^-11 F/m. The aluminum-silicon nitride layer may be further thermally annealed to reduce a hydrogen content of the aluminum-silicon nitride layer.

    摘要翻译： 用于在基板上形成铝 - 氮化硅层的化学气相沉积方法在化学气相沉积条件下使用铝前体，硅前驱体和氮前体，以将铝 - 氮化硅层沉积在基底上。 铝硅氮化物层具有置于氮化硅和氮化铝之间的折射率。 铝 - 氮化硅层还具有约4.5至约6eV的带隙，介电常数约为6×10 ^ -11至约8×10 ^ -11F / m。 铝 - 氮化硅层可进一步热退火以降低铝 - 氮化硅层的氢含量。

    Gated III-V semiconductor structure and method
    3.
    发明授权
    Gated III-V semiconductor structure and method 有权
    门III-V半导体结构及方法

    公开(公告)号：US09299821B2

    公开(公告)日：2016-03-29

    申请号：US13389127

    申请日：2011-06-22

    申请人： James R. Shealy ,  Richard Brown

    发明人： James R. Shealy ,  Richard Brown

    IPC分类号： H01L21/02 ,  H01L29/778 ,  H01L23/29 ,  H01L29/66 ,  H01L23/31 ,  H01L29/10 ,  H01L29/20

    CPC分类号： H01L29/778 ,  H01L21/02381 ,  H01L23/291 ,  H01L23/3171 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/7786 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A gated III-V semiconductor structure and a method for fabricating the gated III-V semiconductor structure includes a threshold modifying dopant region within a III-V semiconductor barrier layer at the base of an aperture through a passivation layer that otherwise passivates the III-V semiconductor barrier layer. The passivation layer, which may comprise an aluminum-silicon nitride material, has particular bandgap and permittivity properties that provide for enhanced performance of a III-V semiconductor device that derives from the III-V semiconductor structure absent a field plate. The threshold modifying dopant region provides the possibility for forming both an enhancement mode gated III-V semiconductor structure and a depletion mode III-V semiconductor structure on the same substrate. The threshold modifying dopant region when comprising a magnesium (Mg) threshold modifying dopant may be incorporated into the gates III-V semiconductor structure using a dicyclopentadienyl magnesium (Cp2Mg) vapor diffusion method or a magnesium-silicon nitride (MgSiN) solid state diffusion method.

    摘要翻译： 门III-V半导体结构和用于制造栅极III-V半导体结构的方法包括在通过钝化层的孔底部的III-V半导体阻挡层内的阈值修改掺杂剂区域，否则钝化层III-V 半导体阻挡层。 可以包括铝 - 氮化硅材料的钝化层具有特定的带隙和介电常数特性，其提供了不存在场板的III-V半导体结构的III-V半导体器件的增强的性能。 阈值修改掺杂剂区域提供在同一衬底上形成增强模式门控III-V半导体结构和耗尽型III-V半导体结构的可能性。 使用二环戊二烯基镁（Cp2Mg）蒸气扩散法或镁 - 氮化硅（MgSiN）固态扩散法可以将包含镁（Mg）阈值修饰掺杂剂的阈值修饰掺杂剂区域结合到栅极III-V半导体结构中。

    GATED III-V SEMICONDUCTOR STRUCTURE AND METHOD
    6.
    发明申请
    GATED III-V SEMICONDUCTOR STRUCTURE AND METHOD 有权
    GATED III-V半导体结构与方法

    公开(公告)号：US20130153963A1

    公开(公告)日：2013-06-20

    申请号：US13389127

    申请日：2011-06-22

    申请人： James R. Shealy ,  Richard Brown

    发明人： James R. Shealy ,  Richard Brown

    IPC分类号： H01L29/778 ,  H01L29/66

    CPC分类号： H01L29/778 ,  H01L21/02381 ,  H01L23/291 ,  H01L23/3171 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/7786 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A gated III-V semiconductor structure and a method for fabricating the gated III-V semiconductor structure includes a threshold modifying dopant region within a III-V semiconductor barrier layer at the base of an aperture through a passivation layer that otherwise passivates the III-V semiconductor barrier layer. The passivation layer, which may comprise an aluminum-silicon nitride material, has particular bandgap and permittivity properties that provide for enhanced performance of a III-V semiconductor device that derives from the III-V semiconductor structure absent a field plate. The threshold modifying dopant region provides the possibility for forming both an enhancement mode gated III-V semiconductor structure and a depletion mode III-V semiconductor structure on the same substrate. The threshold modifying dopant region when comprising a magnesium (Mg) threshold modifying dopant may be incorporated into the gates III-V semiconductor structure using a dicyclopentadienyl magnesium (Cp2Mg) vapor diffusion method or a magnesium-silicon nitride (MgSiN) solid state diffusion method.

    摘要翻译： 门III-V半导体结构和用于制造栅极III-V半导体结构的方法包括在通过钝化层的孔底部的III-V半导体阻挡层内的阈值修改掺杂剂区域，否则钝化层III-V 半导体阻挡层。 可以包括铝 - 氮化硅材料的钝化层具有特定的带隙和介电常数特性，其提供了不存在场板的III-V半导体结构的III-V半导体器件的增强的性能。 阈值修改掺杂剂区域提供在同一衬底上形成增强模式门控III-V半导体结构和耗尽型III-V半导体结构的可能性。 使用二环戊二烯基镁（Cp2Mg）蒸气扩散法或镁 - 氮化硅（MgSiN）固态扩散法可以将包含镁（Mg）阈值修饰掺杂剂的阈值修饰掺杂剂区域结合到栅极III-V半导体结构中。

    CHEMICAL VAPOR DEPOSITION PROCESS FOR ALUMINUM SILICON NITRIDE
    7.
    发明申请
    CHEMICAL VAPOR DEPOSITION PROCESS FOR ALUMINUM SILICON NITRIDE 有权
    化学气相沉积工艺的氮化硅

    公开(公告)号：US20120156895A1

    公开(公告)日：2012-06-21

    申请号：US13380144

    申请日：2010-06-28

    申请人： James R. Shealy ,  Richard Brown

    发明人： James R. Shealy ,  Richard Brown

    IPC分类号： H01L21/31

    CPC分类号： H01L21/318 ,  C23C16/34 ,  H01L21/02145 ,  H01L21/02271

    摘要： A chemical vapor deposition method for forming an aluminum-silicon nitride layer upon a substrate uses an aluminum precursor, a silicon precursor and a nitrogen precursor under chemical vapor deposition conditions to deposit the aluminum-silicon nitride layer upon the substrate. The aluminum-silicon nitride layer has an index of refraction interposed between silicon nitride and aluminum nitride. The aluminum-silicon nitride layer also has a bandgap from about 4.5 to about 6 eV and a permittivity from about 6×10̂-11 to about 8×10̂-11 F/m. The aluminum-silicon nitride layer may be further thermally annealed to reduce a hydrogen content of the aluminum-silicon nitride layer.

    摘要翻译： 用于在基板上形成铝 - 氮化硅层的化学气相沉积方法在化学气相沉积条件下使用铝前体，硅前驱体和氮前体，以将铝 - 氮化硅层沉积在基底上。 铝硅氮化物层具有置于氮化硅和氮化铝之间的折射率。 铝 - 氮化硅层还具有约4.5至约6eV的带隙，介电常数约为6×10-11至约8×10 -11F / m。 铝 - 氮化硅层可进一步热退火以降低铝 - 氮化硅层的氢含量。

    Dynamic virtualization and policy-based access control of removable storage devices in a virtualized environment
    10.
    发明授权
    Dynamic virtualization and policy-based access control of removable storage devices in a virtualized environment 有权
    虚拟化环境中可移动存储设备的动态虚拟化和基于策略的访问控制

    公开(公告)号：US08707303B2

    公开(公告)日：2014-04-22

    申请号：US13259527

    申请日：2009-10-22

    申请人： Keith Harrison ,  Richard Brown ,  Chris I. Dalton

    发明人： Keith Harrison ,  Richard Brown ,  Chris I. Dalton

    IPC分类号： G06F9/455 ,  G06F17/30 ,  H04L29/06

    CPC分类号： G06F21/53 ,  G06F9/45558 ,  G06F21/6209 ,  G06F21/78 ,  G06F2009/45587 ,  G06F2221/2101 ,  G06F2221/2141 ,  G06F2221/2149 ,  G06F2221/2153

    摘要： A method includes executing a hypervisor (165) with computing hardware (105) to implement a virtual machine (175); responsive to detecting a removable storage medium (115) communicatively coupled to the computing hardware (105), executing a virtualized migration control appliance (180) through the hypervisor (165) separate from the virtual machine (175); and blocking the virtual machine (175) from accessing data (185) stored by the removable storage medium (115) with the virtualized migration control appliance (180) if at least one governing policy prohibits the virtual machine (175) from accessing the data (185).

    摘要翻译： 一种方法包括用计算硬件（105）执行管理程序（165）以实现虚拟机（175）; 响应于检测通信地耦合到所述计算硬件（105）的可移动存储介质（115），通过与所述虚拟机（175）分离的所述管理程序（165）执行虚拟化迁移控制设备（180）; 以及如果至少一个管理策略禁止所述虚拟机（175）访问所述数据（175），则阻止所述虚拟机（175）访问由所述可移动存储介质（115）存储的虚拟化迁移控制设备（180）的数据（185） 185）。