Invention Application
- Patent Title: SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
- Patent Title (中): 半导体器件的半导体器件和制造方法
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Application No.: US13241769Application Date: 2011-09-23
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Publication No.: US20120153448A1Publication Date: 2012-06-21
- Inventor: Takumi Ihara , Seiji Ueno , Joji Fujimori , Yasunori Fujimoto
- Applicant: Takumi Ihara , Seiji Ueno , Joji Fujimori , Yasunori Fujimoto
- Applicant Address: JP Yokohama-shi
- Assignee: c/o FUJITSU SEMICONDUCTOR LIMITED
- Current Assignee: c/o FUJITSU SEMICONDUCTOR LIMITED
- Current Assignee Address: JP Yokohama-shi
- Priority: JP2010-279284 20101215
- Main IPC: H01L27/06
- IPC: H01L27/06 ; H01L21/98
Abstract:
A semiconductor device includes: a substrate; a semiconductor element installed on the substrate so that a surface formed with an electrode is directed to the substrate; a chip capacitor installed on the substrate; and a conductive material covering a rear surface opposite to the surface of the semiconductor element and joining to one terminal electrode of the chip capacitor.
Public/Granted literature
- US08564121B2 Semiconductor device and manufacturing method of semiconductor device Public/Granted day:2013-10-22
Information query
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