公开(公告)号：US08564121B2

公开(公告)日：2013-10-22

申请号：US13241769

申请日：2011-09-23

申请人： Takumi Ihara ,  Seiji Ueno ,  Joji Fujimori ,  Yasunori Fujimoto

发明人： Takumi Ihara ,  Seiji Ueno ,  Joji Fujimori ,  Yasunori Fujimoto

IPC分类号： H01L23/34 ,  H01L23/10

CPC分类号： H01L21/76838 ,  H01L23/36 ,  H01L23/3675 ,  H01L23/42 ,  H01L23/552 ,  H01L25/0655 ,  H01L25/16 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/81191 ,  H01L2924/15311 ,  H01L2924/1615 ,  H01L2924/16251 ,  H01L2924/19105 ,  H01L2924/00

摘要： A semiconductor device includes: a substrate; a semiconductor element installed on the substrate so that a surface formed with an electrode is directed to the substrate; a chip capacitor installed on the substrate; and a conductive material covering a rear surface opposite to the surface of the semiconductor element and joining to one terminal electrode of the chip capacitor.

摘要翻译： 半导体器件包括：衬底; 半导体元件安装在基板上，使得形成有电极的表面被引导到基板; 芯片电容器安装在基板上; 以及覆盖与半导体元件的表面相对的后表面并与芯片电容器的一个端子电极接合的导电材料。

公开(公告)号：US20120153448A1

公开(公告)日：2012-06-21

申请号：US13241769

申请日：2011-09-23

申请人： Takumi Ihara ,  Seiji Ueno ,  Joji Fujimori ,  Yasunori Fujimoto

发明人： Takumi Ihara ,  Seiji Ueno ,  Joji Fujimori ,  Yasunori Fujimoto

IPC分类号： H01L27/06 ,  H01L21/98

CPC分类号： H01L21/76838 ,  H01L23/36 ,  H01L23/3675 ,  H01L23/42 ,  H01L23/552 ,  H01L25/0655 ,  H01L25/16 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/81191 ,  H01L2924/15311 ,  H01L2924/1615 ,  H01L2924/16251 ,  H01L2924/19105 ,  H01L2924/00

摘要： A semiconductor device includes: a substrate; a semiconductor element installed on the substrate so that a surface formed with an electrode is directed to the substrate; a chip capacitor installed on the substrate; and a conductive material covering a rear surface opposite to the surface of the semiconductor element and joining to one terminal electrode of the chip capacitor.

摘要翻译： 半导体器件包括：衬底; 半导体元件安装在基板上，使得形成有电极的表面被引导到基板; 芯片电容器安装在基板上; 以及覆盖与半导体元件的表面相对的后表面并与芯片电容器的一个端子电极接合的导电材料。

公开(公告)号：US20080124834A1

公开(公告)日：2008-05-29

申请号：US11653954

申请日：2007-01-17

申请人： Joji Fujimori ,  Seiki Sakuyama ,  Toshiya Akamatsu

发明人： Joji Fujimori ,  Seiki Sakuyama ,  Toshiya Akamatsu

IPC分类号： H01L21/58

CPC分类号： H01L24/05 ,  H01L21/563 ,  H01L23/3128 ,  H01L23/3171 ,  H01L23/49816 ,  H01L23/5222 ,  H01L23/5329 ,  H01L24/03 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/0401 ,  H01L2224/05073 ,  H01L2224/05568 ,  H01L2224/05624 ,  H01L2224/13023 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/16 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/81011 ,  H01L2224/81204 ,  H01L2224/81211 ,  H01L2224/81801 ,  H01L2924/00013 ,  H01L2924/0002 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12044 ,  H01L2924/15311 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2224/29099 ,  H01L2224/05552

摘要： A mounting method of a semiconductor element whereby the semiconductor element is mounted on a wiring board via an outside connection projection electrode not containing lead (Pb), the mounting method includes a step of applying a reflow heating process for connecting the outside connection projection electrode of the semiconductor element and the wiring board and then cooling the connected semiconductor element and wiring board at a cooling rate equal to and lower than 0.5° C./s.

摘要翻译： 一种半导体元件的安装方法，其中半导体元件经由不包含引线（Pb）的外部连接投影电极安装在布线板上，该安装方法包括以下步骤：将回流加热工艺连接到外部连接突起电极 半导体元件和布线板，然后以等于或等于0.5℃的冷却速率冷却连接的半导体元件和布线板。

公开(公告)号：US06218281B1

公开(公告)日：2001-04-17

申请号：US09192443

申请日：1998-11-16

申请人： Eiji Watanabe ,  Hirohisa Matsuki ,  Kenichi Kado ,  Kenichi Nagashige ,  Masanori Onodera ,  Kunio Kodama ,  Hiroyuki Yoda ,  Joji Fujimori ,  Minoru Nakada ,  Yutaka Makino

发明人： Eiji Watanabe ,  Hirohisa Matsuki ,  Kenichi Kado ,  Kenichi Nagashige ,  Masanori Onodera ,  Kunio Kodama ,  Hiroyuki Yoda ,  Joji Fujimori ,  Minoru Nakada ,  Yutaka Makino

IPC分类号： H01L2144

CPC分类号： H01L24/11 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L2224/0231 ,  H01L2224/02377 ,  H01L2224/03462 ,  H01L2224/039 ,  H01L2224/03912 ,  H01L2224/0392 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/05567 ,  H01L2224/05569 ,  H01L2224/05571 ,  H01L2224/05647 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/1191 ,  H01L2224/13024 ,  H01L2224/13082 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2924/00011 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/81805

摘要： A semiconductor substrate is prepared which has a principal surface, an exposed pad made of conductive material being formed in a partial area of the principal surface, and the other area of the principal surface being covered with a first insulating film. A base conductive film is formed on the first insulating film and the pad. A photoresist film having a thickness of 50 &mgr;m or thicker is formed on the base conductive film. An opening is formed through the photoresist film in an area corresponding to the pad to expose a partial surface area of the base conductive film. A conductive bump electrode is deposited on the base conductive film exposed on a bottom of the opening. The photoresist film is removed. This method is suitable for making a fine pitch between bump electrodes.

摘要翻译： 制备半导体衬底，其具有主表面，由导电材料制成的裸露焊盘形成在主表面的局部区域中，并且主表面的另一区域被第一绝缘膜覆盖。 在第一绝缘膜和垫上形成基底导电膜。 在基底导电膜上形成厚度为50μm以上的光刻胶膜。 在与该焊盘相对应的区域中形成通过光致抗蚀剂膜的开口以暴露基底导电膜的部分表面区域。 导电凸块电极沉积在暴露在开口底部的基底导电膜上。 除去光致抗蚀剂膜。 该方法适用于在凸块电极之间形成细间距。

公开(公告)号：US5831441A

公开(公告)日：1998-11-03

申请号：US612750

申请日：1996-03-08

申请人： Toshiyuki Motooka ,  Syuichirou Takahasi ,  Tatsuharu Matsuda ,  Kunio Kodama ,  Joji Fujimori ,  Shigeki Harada ,  Masataka Mizukoshi ,  Masashi Takenaka ,  Tatsuro Yamashita

发明人： Toshiyuki Motooka ,  Syuichirou Takahasi ,  Tatsuharu Matsuda ,  Kunio Kodama ,  Joji Fujimori ,  Shigeki Harada ,  Masataka Mizukoshi ,  Masashi Takenaka ,  Tatsuro Yamashita

IPC分类号： G01R1/04 ,  G01R1/073 ,  G01R31/02

CPC分类号： G01R1/0433 ,  G01R1/07364

摘要： A test board used for testing a semiconductor device provided with projection electrodes includes a main board and testing electrodes. The testing electrodes are provided on the main board, each projecting upwardly from the main board. When the semiconductor device is tested, the testing electrodes are electrically connected to the projection electrodes by insertion of the testing electrodes into the projection electrodes. The semiconductor device is mounted on the main board to test the semiconductor device through the testing electrodes.

摘要翻译： 用于测试具有投影电极的半导体器件的测试板包括主板和测试电极。 测试电极设置在主板上，每个从主板向上突出。 当测试半导体器件时，通过将测试电极插入投影电极中，测试电极与投影电极电连接。 半导体器件安装在主板上，以通过测试电极测试半导体器件。

公开(公告)号：US07879713B2

公开(公告)日：2011-02-01

申请号：US11653954

申请日：2007-01-17

申请人： Joji Fujimori ,  Seiki Sakuyama ,  Toshiya Akamatsu

发明人： Joji Fujimori ,  Seiki Sakuyama ,  Toshiya Akamatsu

IPC分类号： H01L21/44

CPC分类号： H01L24/05 ,  H01L21/563 ,  H01L23/3128 ,  H01L23/3171 ,  H01L23/49816 ,  H01L23/5222 ,  H01L23/5329 ,  H01L24/03 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/0401 ,  H01L2224/05073 ,  H01L2224/05568 ,  H01L2224/05624 ,  H01L2224/13023 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/16 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/81011 ,  H01L2224/81204 ,  H01L2224/81211 ,  H01L2224/81801 ,  H01L2924/00013 ,  H01L2924/0002 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12044 ,  H01L2924/15311 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2224/29099 ,  H01L2224/05552

摘要： A mounting method of a semiconductor element whereby the semiconductor element is mounted on a wiring board via an outside connection projection electrode not containing lead (Pb), the mounting method includes a step of applying a reflow heating process for connecting the outside connection projection electrode of the semiconductor element and the wiring board and then cooling the connected semiconductor element and wiring board at a cooling rate equal to and lower than 0.5° C./s.

摘要翻译： 一种半导体元件的安装方法，其中半导体元件经由不包含引线（Pb）的外部连接投影电极安装在布线板上，该安装方法包括以下步骤：将回流加热工艺连接到外部连接突起电极 半导体元件和布线板，然后以等于或等于0.5℃的冷却速率冷却连接的半导体元件和布线板。

公开(公告)号：US07871917B2

公开(公告)日：2011-01-18

申请号：US11443103

申请日：2006-05-31

申请人： Joji Fujimori

发明人： Joji Fujimori

IPC分类号： H01L21/44

CPC分类号： H01L24/11 ,  H01L23/3192 ,  H01L24/03 ,  H01L24/05 ,  H01L24/12 ,  H01L24/13 ,  H01L24/742 ,  H01L2224/0381 ,  H01L2224/0401 ,  H01L2224/05073 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/1131 ,  H01L2224/11332 ,  H01L2224/11472 ,  H01L2224/11515 ,  H01L2224/13022 ,  H01L2224/1329 ,  H01L2224/133 ,  H01L2224/13309 ,  H01L2224/13318 ,  H01L2224/1332 ,  H01L2224/13344 ,  H01L2224/13347 ,  H01L2224/13355 ,  H01L2224/13364 ,  H01L2224/13369 ,  H01L2224/742 ,  H01L2224/94 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01049 ,  H01L2924/01051 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2224/11 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2224/05099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/29099 ,  H01L2224/29599

摘要： To provide a low-cost, easy-to-use, and efficient method for manufacturing a semiconductor device, which eliminates the need for the formation or removal of barrier metals upon formation of bumps, and a high-performance semiconductor device with fine bumps arranged at a narrow pitch. The method includes: forming a plurality of electrode pads 12 on one surface of a semiconductor substrate 10; forming insulating layers (e.g., inorganic insulating layer 14 and organic insulating layer 16) to cover the perimeter of each electrode pad 12; selectively forming a mask layer 20 on the insulating layers 14 and 16; cleaning the surface of the electrode pads 12 which is not covered with the insulating layers 14 and 16; forming external terminals 46 in regions defined by the insulating layers 14 and 16 and mask layer 20 so that they are in contact with the electrode pads 12; and removing the mask layer 20.

摘要翻译： 为了提供一种制造半导体器件的低成本，易于使用和有效的方法，其消除了在形成凸块时形成或去除阻挡金属的需要，以及布置有微小凸块的高性能半导体器件 在狭窄的音调。 该方法包括：在半导体衬底10的一个表面上形成多个电极焊盘12; 形成绝缘层（例如，无机绝缘层14和有机绝缘层16）以覆盖每个电极焊盘12的周边; 在绝缘层14和16上选择性地形成掩模层20; 清洁未被绝缘层14和16覆盖的电极焊盘12的表面; 在由绝缘层14和16以及掩模层20限定的区域中形成外部端子46，使得它们与电极焊盘12接触; 并去除掩模层20。

公开(公告)号：US06897142B2

公开(公告)日：2005-05-24

申请号：US10631756

申请日：2003-08-01

申请人： Joji Fujimori ,  Ichiro Yamaguchi

发明人： Joji Fujimori ,  Ichiro Yamaguchi

IPC分类号： H01L21/56 ,  H01L21/60 ,  H05K3/34

CPC分类号： H01L24/12 ,  H01L21/563 ,  H01L24/11 ,  H01L24/16 ,  H01L24/29 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/1147 ,  H01L2224/11472 ,  H01L2224/1152 ,  H01L2224/11849 ,  H01L2224/131 ,  H01L2224/13566 ,  H01L2224/1357 ,  H01L2224/1369 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/73203 ,  H01L2224/81355 ,  H01L2224/818 ,  H01L2224/83191 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01059 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/1579 ,  H05K3/3452 ,  H05K3/3484 ,  H05K2201/10977 ,  H05K2203/043 ,  H05K2203/0568 ,  H05K2203/0577 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/0665 ,  H01L2224/05599

摘要： A method of forming a solder ball includes the steps of forming an electrode pad on a substrate, forming an insulating layer having a first opening at a position of the electrode pad, filling the first opening with solder paste that include solder and first resin, and applying a heating process to the solder paste so as to form a solder ball on the electrode pad and to form a cured resin member of the first resin across a border between the electrode pad and the substrate.

摘要翻译： 形成焊球的方法包括以下步骤：在基板上形成电极焊盘，在电极焊盘的位置形成具有第一开口的绝缘层，用包括焊料和第一树脂的焊膏填充第一开口，以及 对焊膏进行加热处理，以便在电极焊盘上形成焊球，并且在电极焊盘和基板之间的边界上形成第一树脂的固化树脂部件。

公开(公告)号：US20100105173A1

公开(公告)日：2010-04-29

申请号：US12603081

申请日：2009-10-21

申请人： Joji Fujimori

发明人： Joji Fujimori

IPC分类号： H01L21/60

CPC分类号： H01L24/12 ,  H01L24/11 ,  H01L24/16 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/11822 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/131 ,  H01L2224/16 ,  H01L2224/81011 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/10329 ,  H01L2924/30105 ,  H05K3/3436 ,  H05K3/3484 ,  H05K2201/035 ,  H05K2203/0338 ,  Y02P70/613 ,  H01L2224/13099 ,  H01L2924/00014

摘要： A method for manufacturing a semiconductor device by mounting a semiconductor element on a circuit board, the semiconductor element having a first electrode made of a first material on a semiconductor substrate, the circuit board having a second electrode made of a second material on an insulating substrate, the method includes forming a connecting member on the first electrode, a melting point of the connecting member being lower than a melting point of the first material, placing the semiconductor element on the circuit board, so as to face the connecting member toward the second electrode, and connecting the first electrode and the second electrode, so as to interpose the connecting member between the first electrode and the second electrode, at a temperature that is lower than the melting point of the first material and higher than the melting point of the connecting member.

摘要翻译： 一种通过将半导体元件安装在电路板上来制造半导体器件的方法，所述半导体元件具有由半导体衬底上的第一材料制成的第一电极，所述电路板具有由绝缘衬底上的第二材料制成的第二电极 所述方法包括在所述第一电极上形成连接构件，所述连接构件的熔点低于所述第一材料的熔点，将所述半导体元件放置在所述电路板上，以朝向所述第二电极的所述连接构件 电极，并且连接第一电极和第二电极，以使连接构件在第一电极和第二电极之间的温度低于第一材料的熔点并高于第一电极的熔点 连接构件。

公开(公告)号：US20070197016A1

公开(公告)日：2007-08-23

申请号：US11443103

申请日：2006-05-31

申请人： Joji Fujimori

发明人： Joji Fujimori

IPC分类号： H01L21/44

CPC分类号： H01L24/11 ,  H01L23/3192 ,  H01L24/03 ,  H01L24/05 ,  H01L24/12 ,  H01L24/13 ,  H01L24/742 ,  H01L2224/0381 ,  H01L2224/0401 ,  H01L2224/05073 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/1131 ,  H01L2224/11332 ,  H01L2224/11472 ,  H01L2224/11515 ,  H01L2224/13022 ,  H01L2224/1329 ,  H01L2224/133 ,  H01L2224/13309 ,  H01L2224/13318 ,  H01L2224/1332 ,  H01L2224/13344 ,  H01L2224/13347 ,  H01L2224/13355 ,  H01L2224/13364 ,  H01L2224/13369 ,  H01L2224/742 ,  H01L2224/94 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01049 ,  H01L2924/01051 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2224/11 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2224/05099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/29099 ,  H01L2224/29599

摘要： To provide a low-cost, easy-to-use, and efficient method for manufacturing a semiconductor device, which eliminates the need for the formation or removal of barrier metals upon formation of bumps, and a high-performance semiconductor device with fine bumps arranged at a narrow pitch. The method includes: forming a plurality of electrode pads 12 on one surface of a semiconductor substrate 10; forming insulating layers (e.g., inorganic insulating layer 14 and organic insulating layer 16) to cover the perimeter of each electrode pad 12; selectively forming a mask layer 20 on the insulating layers 14 and 16; cleaning the surface of the electrode pads 12 which is not covered with the insulating layers 14 and 16; forming external terminals 46 in regions defined by the insulating layers 14 and 16 and mask layer 20 so that they are in contact with the electrode pads 12; and removing the mask layer 20.

摘要翻译： 为了提供一种制造半导体器件的低成本，易于使用和有效的方法，其消除了在形成凸块时形成或去除阻挡金属的需要，以及布置有微小凸块的高性能半导体器件 在狭窄的音调。 该方法包括：在半导体衬底10的一个表面上形成多个电极焊盘12; 形成绝缘层（例如，无机绝缘层14和有机绝缘层16）以覆盖每个电极焊盘12的周边; 在绝缘层14和16上选择性地形成掩模层20; 清洁未被绝缘层14和16覆盖的电极焊盘12的表面; 在由绝缘层14和16以及掩模层20限定的区域中形成外部端子46，使得它们与电极焊盘12接触; 并去除掩模层20。