发明申请
- 专利标题： SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREFOR
- 专利标题（中）： 半导体器件及其生产方法
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申请号： US13333569申请日： 2011-12-21
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公开(公告)号： US20120153486A1公开(公告)日： 2012-06-21
- 发明人: Masafumi KURAMOTO , Satoru Ogawa , Teppei Kunimune
- 申请人： Masafumi KURAMOTO , Satoru Ogawa , Teppei Kunimune
- 申请人地址： JP Anan-shi
- 专利权人： NICHIA CORPORATION
- 当前专利权人： NICHIA CORPORATION
- 当前专利权人地址： JP Anan-shi
- 优先权： JP2009-013712 20090123
- 主分类号： H01L23/488
- IPC分类号： H01L23/488 ; H01L33/62
摘要：
An object of the invention is to provide a method for producing a conductive member having low electrical resistance, and the conductive member is obtained using a low-cost stable conductive material composition that does not contain an adhesive. In the semiconductor device, silver arranged on a semiconductor element and silver arranged on a base are bonded. No void is present or a small void, if any, is present at an interface between the semiconductor element and the silver arranged on the semiconductor element, no void is present or a small void, if any, is present at an interface between the base and the silver arranged on the base, and one or more silver abnormal growth grains and one or more voids are present in a bonded interface between the silver arranged on the semiconductor element and the silver arranged on the base.
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