Invention Application
- Patent Title: CONDUCTIVE PASTE COMPOSITION FOR TERMINATION ELECTRODE, MULTILAYER CERAMIC CAPACITOR INCLUDING THE SAME AND METHOD OF MANUFACTURING THEREOF
- Patent Title (中): 用于终止电极的导电性组合物,包括其的多层陶瓷电容器及其制造方法
-
Application No.: US13111319Application Date: 2011-05-19
-
Publication No.: US20120154977A1Publication Date: 2012-06-21
- Inventor: Kang Heon HUR , Chang Hoon KIM , Sung Bum SOHN , Ji Sook KIM , Hyun Hee GU , Gun Jung YOON , Kyu Ha LEE , Sang Hoon KWON , Myung Jun PARK
- Applicant: Kang Heon HUR , Chang Hoon KIM , Sung Bum SOHN , Ji Sook KIM , Hyun Hee GU , Gun Jung YOON , Kyu Ha LEE , Sang Hoon KWON , Myung Jun PARK
- Assignee: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- Priority: KR10-2010-0130318 20101217
- Main IPC: H01G4/008
- IPC: H01G4/008 ; B32B38/10 ; B32B37/06 ; B32B37/14 ; H01B1/16 ; B32B37/02

Abstract:
There are provided a conductive paste composition for a termination electrode, a multilayer ceramic capacitor having the same, and a method thereof. The conductive paste composition for a termination electrode includes a conductive metal powder and a glass frit represented by the following Formula: aSiO2-bB2O3-cAl2O3-dTMxOy-eR12O-fR2O, where TM is a transition metal selected from a group consisting of zinc (Zn), titanium (Ti), copper (Cu), vanadium (V), manganese (Mn), iron (Fe) and nickel (Ni); R1 is selected from a group consisting of lithium (Li), sodium (Na) and potassium (K); R2 is selected from a group consisting of magnesium (Mg), calcium (Ca), strontium (Sr) and barium (Ba); each of x and y is larger than 0; and ‘a’ ranges from 15 to 70 mol %, ‘b’ ranges from 15 to 45 mol %, ‘c’ ranges from 1 to 10 mol %, ‘d’ ranges from 1 to 50 mol %, ‘e’ ranges from 2 to 30 mol % and ‘f’ ranges from 5 to 40 mol %. The conductive paste composition for a termination electrode includes a glass frit compound having improved corrosion resistance to a plating solution, thus effectively preventing the penetration of the plating solution and enhancing chip reliability.
Information query