发明申请
US20120156861A1 QUASI-HYDROPHOBIC Si-Si WAFER BONDING USING HYDROPHILIC Si SURFACES AND DISSOLUTION OF INTERFACIAL BONDING OXIDE
审中-公开
使用水解硅表面和界面结合氧化物的溶解度的偶氮硅Si-Si波形粘结
- 专利标题： QUASI-HYDROPHOBIC Si-Si WAFER BONDING USING HYDROPHILIC Si SURFACES AND DISSOLUTION OF INTERFACIAL BONDING OXIDE
- 专利标题（中）： 使用水解硅表面和界面结合氧化物的溶解度的偶氮硅Si-Si波形粘结
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申请号： US13405760申请日： 2012-02-27
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公开(公告)号： US20120156861A1公开(公告)日： 2012-06-21
- 发明人: Joel P. de Souza , John A. Ott , Alexander Reznicek , Devendra K. Sadana , Katherine L. Saenger
- 申请人： Joel P. de Souza , John A. Ott , Alexander Reznicek , Devendra K. Sadana , Katherine L. Saenger
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L21/302
- IPC分类号： H01L21/302
摘要：
Methods for removing or reducing the thickness of a material layer remaining at Si-Si interfaces after silicon wafer bonding. The methods include an anneal which is performed at a temperature sufficient to dissolve oxide, yet not melt silicon.