发明申请
US20120161139A1 SEMICONDUCTOR CIRCUIT, METHOD FOR DRIVING THE SAME, STORAGE DEVICE, REGISTER CIRCUIT, DISPLAY DEVICE, AND ELECTRONIC DEVICE
有权
半导体电路，驱动它们的方法，存储器件，寄存器电路，显示器件和电子器件
- 专利标题： SEMICONDUCTOR CIRCUIT, METHOD FOR DRIVING THE SAME, STORAGE DEVICE, REGISTER CIRCUIT, DISPLAY DEVICE, AND ELECTRONIC DEVICE
- 专利标题（中）： 半导体电路，驱动它们的方法，存储器件，寄存器电路，显示器件和电子器件
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申请号： US13310824申请日： 2011-12-05
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公开(公告)号： US20120161139A1公开(公告)日： 2012-06-28
- 发明人: Masami ENDO , Kazuaki OHSHIMA
- 申请人： Masami ENDO , Kazuaki OHSHIMA
- 申请人地址： JP Atsugi-shi
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP Atsugi-shi
- 优先权： JP2010-287598 20101224
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; H01L33/16
摘要：
A semiconductor circuit capable of controlling and holding the threshold voltage of a transistor at an optimal level and a driving method thereof are disclosed. A storage device, a display device, or an electronic device including the semiconductor circuit is also provided. The semiconductor circuit comprises a diode and a first capacitor provided in a node to which a transistor to be controlled is connected through its back gate. This structure allows the application of desired voltage to the back gate so that the threshold voltage of the transistor is controlled at an optimal level and can be held for a long time. A second capacitor connected in parallel with the diode is optionally provided so that the voltage of the node can be changed temporarily.
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