发明申请
- 专利标题: Grown Photonic Crystals in Semiconductor Light Emitting Devices
- 专利标题(中): 半导体发光器件中的生长光子晶体
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申请号: US13404369申请日: 2012-02-24
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公开(公告)号: US20120161187A1公开(公告)日: 2012-06-28
- 发明人: Jonathan J. Wierer, JR. , Michael R. Krames , Nathan F. Gardner
- 申请人: Jonathan J. Wierer, JR. , Michael R. Krames , Nathan F. Gardner
- 申请人地址: NL EINDHOVEN
- 专利权人: KONINKLIJKE PHILIPS ELECTRONICS N.V.
- 当前专利权人: KONINKLIJKE PHILIPS ELECTRONICS N.V.
- 当前专利权人地址: NL EINDHOVEN
- 主分类号: H01L33/58
- IPC分类号: H01L33/58
摘要:
A photonic crystal is grown within a semiconductor structure, such as a III-nitride structure, which includes a light emitting region disposed between an n-type region and a p-type region. The photonic crystal may be multiple regions of semiconductor material separated by a material having a different refractive index than the semiconductor material. For example, the photonic crystal may be posts of semiconductor material grown in the structure and separated by air gaps or regions of masking material. Growing the photonic crystal, rather than etching a photonic crystal into an already-grown semiconductor layer, avoids damage caused by etching which may reduce efficiency, and provides uninterrupted, planar surfaces on which to form electric contacts.