Illumination sources with thermally-isolated electronics
    2.
    发明授权
    Illumination sources with thermally-isolated electronics 有权
    带隔离电子元件的照明源

    公开(公告)号:US08884517B1

    公开(公告)日:2014-11-11

    申请号:US13274489

    申请日:2011-10-17

    IPC分类号: H01K1/62 H01J9/24

    摘要: An lighting source includes a driver for outputting electrical power in response to external electrical power, wherein the driver generates heat in response thereto, a lamp coupled to the driver, for outputting light in response to the electrical power, wherein the lamp generates heat in response thereto, a first heat sink physically coupled to the driver for receiving and dissipating heat there from, a second heat sink physically coupled to the light for receiving heat and dissipating heat there from, and an insulating portion disposed between the first heat sink and the second heat sink, wherein the insulating portion is configured to inhibit heat from the lamp from being transferred to the driver.

    摘要翻译: 照明源包括用于响应于外部电力输出电力的驱动器,其中驱动器响应于此而产生热量,连接到驱动器的灯,用于响应于电功率而输出光,其中灯发出响应的热量 物理耦合到驱动器的第一散热器,用于从其接收和散发热量,物理耦合到光的第二散热器,用于接收热量并从中散发热量;以及绝缘部分,设置在第一散热器和第二散热器之间 散热器,其中所述绝缘部分被配置为抑制来自所述灯的热量被传送到所述驱动器。

    Method for Growth of Indium-Containing Nitride Films
    5.
    发明申请
    Method for Growth of Indium-Containing Nitride Films 有权
    含铟氮化物膜生长方法

    公开(公告)号:US20120199952A1

    公开(公告)日:2012-08-09

    申请号:US13346507

    申请日:2012-01-09

    IPC分类号: H01L29/20 H01L21/20

    摘要: A method for growth of indium-containing nitride films is described, particularly a method for fabricating a gallium, indium, and nitrogen containing material. On a substrate having a surface region a material having a first indium-rich concentration is formed, followed by a second thickness of material having a first indium-poor concentration. Then a third thickness of material having a second indium-rich concentration is added to form a sandwiched structure which is thermally processed to cause formation of well-crystallized, relaxed material within a vicinity of a surface region of the sandwich structure.

    摘要翻译: 描述了含铟氮化物膜的生长方法,特别是制造镓,铟和含氮材料的方法。 在具有表面区域的基板上形成具有第一富铟浓度的材料,然后形成具有第一贫铟浓度的第二厚度的材料。 然后加入具有第二富铟浓度的第三厚度的材料以形成夹层结构,其被热处理以在夹层结构的表面区域附近形成良好结晶的松弛材料。

    Grown photonic crystals in semiconductor light emitting devices
    7.
    发明授权
    Grown photonic crystals in semiconductor light emitting devices 有权
    半导体发光器件中的生长光子晶体

    公开(公告)号:US08163575B2

    公开(公告)日:2012-04-24

    申请号:US11156105

    申请日:2005-06-17

    IPC分类号: H01L21/00

    摘要: A photonic crystal is grown within a semiconductor structure, such as a III-nitride structure, which includes a light emitting region disposed between an n-type region and a p-type region. The photonic crystal may be multiple regions of semiconductor material separated by a material having a different refractive index than the semiconductor material. For example, the photonic crystal may be posts of semiconductor material grown in the structure and separated by air gaps or regions of masking material. Growing the photonic crystal, rather than etching a photonic crystal into an already-grown semiconductor layer, avoids damage caused by etching which may reduce efficiency, and provides uninterrupted, planar surfaces on which to form electric contacts.

    摘要翻译: 光子晶体在诸如III族氮化物结构的半导体结构内生长,其包括设置在n型区域和p型区域之间的发光区域。 光子晶体可以是由具有与半导体材料不同的折射率的材料分离的半导体材料的多个区域。 例如,光子晶体可以是在结构中生长并由气隙或掩模材料区域分离的半导体材料的柱。 生长光子晶体,而不是将光子晶体蚀刻成已经生长的半导体层,避免了蚀刻造成的损伤,这可能降低效率,并提供不间断的平面,在其上形成电触点。

    SUBSTRATE FOR GROWING A III-V LIGHT EMITTING DEVICE
    9.
    发明申请
    SUBSTRATE FOR GROWING A III-V LIGHT EMITTING DEVICE 有权
    用于生长III-V发光装置的基板

    公开(公告)号:US20110027975A1

    公开(公告)日:2011-02-03

    申请号:US12887853

    申请日:2010-09-22

    IPC分类号: H01L21/20

    摘要: A substrate including a host and a seed layer bonded to the host is provided, then a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region is grown on the seed layer. In some embodiments, a bonding layer bonds the host to the seed layer. The seed layer may be thinner than a critical thickness for relaxation of strain in the semiconductor structure, such that strain in the semiconductor structure is relieved by dislocations formed in the seed layer, or by gliding between the seed layer and the bonding layer an interface between the two layers. In some embodiments, the host may be separated from the semiconductor structure and seed layer by etching away the bonding layer.

    摘要翻译: 提供了包括与主体结合的主体和种子层的基板,然后在种子层上生长包括设置在n型区域和p型区域之间的发光层的半导体结构。 在一些实施方案中,结合层将主体结合到种子层。 种子层可以比用于缓和半导体结构中的应变的临界厚度薄,使得半导体结构中的应变由种子层中形成的位错或通过在种子层和结合层之间滑动而消除, 两层。 在一些实施例中,可以通过蚀刻掉粘合层来将主体与半导体结构和种子层分离。

    WAVELENGTH CONVERSION FOR PRODUCING WHITE LIGHT FROM HIGH POWER BLUE LED
    10.
    发明申请
    WAVELENGTH CONVERSION FOR PRODUCING WHITE LIGHT FROM HIGH POWER BLUE LED 审中-公开
    用于从大功率蓝光LED生产白光的波长转换

    公开(公告)号:US20100289044A1

    公开(公告)日:2010-11-18

    申请号:US12464327

    申请日:2009-05-12

    IPC分类号: H01L33/00

    摘要: A white light LED is described that uses an LED die that emits visible blue light in a wavelength range of about 450-470 nm. A red phosphor or quantum dot material converts some of the blue light to a visible red light having a peak wavelength between about 605-625 nm with a full-width-half-maximum (FWHM) less than 80 nm. A green phosphor or quantum dot material converts some of the blue light to a green light having a FWHM greater than 40 nm, wherein the combination of the blue light, red light, and green light produces a white light providing a color rendering of Ra,8>90 and a color temperature of between 2500K-5000K. Preferably, the red and green converting material do not saturate with an LED die output of 100 W/cm2 and can reliably operate with an LED die junction temperature over 100 degrees C.

    摘要翻译: 描述了使用发射在约450-470nm的波长范围内的可见蓝光的LED管芯的白光LED。 红色荧光体或量子点材料将一些蓝色光转换成具有在约605-625nm之间的峰值波长和小于80nm的全宽半最大值(FWHM)的可见红光。 绿色荧光体或量子点材料将一些蓝色光转换成具有大于40nm的FWHM的绿色光,其中蓝色光,红色光和绿色光的组合产生提供Ra的显色性的白色光, 8> 90,色温在2500K-5000K之间。 优选地,红色和绿色转换材料对于100W / cm 2的LED管芯输出不饱和,并且可以在LED管芯结温超过100摄氏度时可靠地工作。