发明申请
US20120161287A1 METHOD FOR ENHANCING GROWTH OF SEMI-POLAR (Al,In,Ga,B)N VIA METALORGANIC CHEMICAL VAPOR DEPOSITION
审中-公开
用于增强半极性（Al，In，Ga，B）N生长的方法通过金属化学气相沉积
- 专利标题： METHOD FOR ENHANCING GROWTH OF SEMI-POLAR (Al,In,Ga,B)N VIA METALORGANIC CHEMICAL VAPOR DEPOSITION
- 专利标题（中）： 用于增强半极性（Al，In，Ga，B）N生长的方法通过金属化学气相沉积
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申请号： US13351514申请日： 2012-01-17
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公开(公告)号： US20120161287A1公开(公告)日： 2012-06-28
- 发明人: Michael Iza , Troy J. Baker , Benjamin A. Haskell , Steven P. DenBaars , Shuji Nakamura
- 申请人： Michael Iza , Troy J. Baker , Benjamin A. Haskell , Steven P. DenBaars , Shuji Nakamura
- 申请人地址： JP Kawaguchi City US CA Oakland
- 专利权人： JAPAN SCIENCE AND TECHNOLOGY AGENCY,THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- 当前专利权人： JAPAN SCIENCE AND TECHNOLOGY AGENCY,THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- 当前专利权人地址： JP Kawaguchi City US CA Oakland
- 主分类号： H01L29/12
- IPC分类号： H01L29/12 ; C30B25/18 ; C30B25/02
摘要：
A method for growing a semi-polar nitride semiconductor thin film via metalorganic chemical vapor deposition (MOCVD) on a substrate, wherein a nitride nucleation or buffer layer is grown on the substrate prior to the growth of the semi-polar nitride semiconductor thin film.
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