发明申请
US20120161807A1 SINGLE LEVEL OF METAL TEST STRUCTURE FOR DIFFERENTIAL TIMING AND VARIABILITY MEASUREMENTS OF INTEGRATED CIRCUITS
审中-公开
金属测试结构的单一级别,用于差分时序和集成电路的可变性测量
- 专利标题: SINGLE LEVEL OF METAL TEST STRUCTURE FOR DIFFERENTIAL TIMING AND VARIABILITY MEASUREMENTS OF INTEGRATED CIRCUITS
- 专利标题(中): 金属测试结构的单一级别,用于差分时序和集成电路的可变性测量
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申请号: US13410851申请日: 2012-03-02
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公开(公告)号: US20120161807A1公开(公告)日: 2012-06-28
- 发明人: Manjul Bhushan , Mark B. Ketchen , Chin Kim
- 申请人: Manjul Bhushan , Mark B. Ketchen , Chin Kim
- 申请人地址: US NY Armonk
- 专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址: US NY Armonk
- 主分类号: G01R31/26
- IPC分类号: G01R31/26
摘要:
A test structure for an integrated circuit device includes one or more experiments selectively configured to receive one or more high-speed input signals as inputs thereto and to output at least one high-speed output signal therefrom, the one or more experiments each including two or more logic gates configured to determine differential delay characteristics of individual circuit devices, at a precision level on the order of picoseconds to less than 1 picosecond; and wherein the one or more sets of experiments are disposed, and are fully testable, at a first level of metal wiring (M1) in the integrated circuit device.
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