发明申请
- 专利标题: METHOD OF FABRICATING A DIFFERENTIAL DOPED SOLAR CELL
- 专利标题(中): 制造差异放电太阳能电池的方法
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申请号: US13303126申请日: 2011-11-22
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公开(公告)号: US20120164779A1公开(公告)日: 2012-06-28
- 发明人: Chi-Hsiung CHANG , Kuan-Lun Chang , Hung-Yi Chang , Yi-Min Pan , Jun-Min Wu , Ying-Yen Chiu
- 申请人: Chi-Hsiung CHANG , Kuan-Lun Chang , Hung-Yi Chang , Yi-Min Pan , Jun-Min Wu , Ying-Yen Chiu
- 专利权人: BIG SUN Energy Technology Incorporation
- 当前专利权人: BIG SUN Energy Technology Incorporation
- 优先权: TW099145205 20101222
- 主分类号: H01L31/18
- IPC分类号: H01L31/18
摘要:
A method of fabricating a differential doped solar cell is provided. The method comprises the steps of (a) providing a light doped semiconductor substrate; (b) forming a heavy doped layer having the same type of dopant used in step (a) on a front surface of the semiconductor substrate; and (c) forming an emitter layer having a different type of dopant used in step (a) on a surface of the heavy doped layer to constitute a p-n junction with the heavy doped layer.
公开/授权文献
- US08445311B2 Method of fabricating a differential doped solar cell 公开/授权日:2013-05-21
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