发明申请
- 专利标题： SPLIT GATE TYPE NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
- 专利标题（中）： 分离栅型非挥发性半导体存储器件及其制造方法
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申请号： US13413326申请日： 2012-03-06
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公开(公告)号： US20120164823A1公开(公告)日： 2012-06-28
- 发明人: Takaaki NAGAI
- 申请人： Takaaki NAGAI
- 专利权人： Renesas Electronics Corporation
- 当前专利权人： Renesas Electronics Corporation
- 优先权： JP2006-083434 20060324
- 主分类号： H01L21/283
- IPC分类号： H01L21/283
摘要：
A split gate-type non-volatile semiconductor memory device includes a floating gate having an acute-angled portion between a side surface and an upper surface above a semiconductor substrate; a control gate provided apart from the floating gate to oppose to the acute-angled portion; and an insulating portion provided on the floating gate. A side surface of the insulating portion on a side of the control gate is inclined to a direction apart from the control gate with respect to a vertical line to the semiconductor substrate.
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