发明申请
- 专利标题: Nanomesh SRAM Cell
- 专利标题(中): Nanomesh SRAM单元
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申请号: US13417829申请日: 2012-03-12
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公开(公告)号: US20120168872A1公开(公告)日: 2012-07-05
- 发明人: Josephine Chang , Paul Chang , Michael A. Guillorn , Jeffrey Sleight
- 申请人: Josephine Chang , Paul Chang , Michael A. Guillorn , Jeffrey Sleight
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 主分类号: H01L27/088
- IPC分类号: H01L27/088 ; B82Y99/00
摘要:
Nanowire-based devices are provided. In one aspect, a SRAM cell includes at least one pair of pass gates and at least one pair of inverters formed adjacent to one another on a wafer. Each pass gate includes one or more device layers each having a source region, a drain region and a plurality of nanowire channels connecting the source region and the drain region and a gate common to each of the pass gate device layers surrounding the nanowire channels. Each inverter includes a plurality of device layers each having a source region, a drain region and a plurality of nanowire channels connecting the source region and the drain region and a gate common to each of the inverter device layers surrounding the nanowire channels.
公开/授权文献
- US08395220B2 Nanomesh SRAM cell 公开/授权日:2013-03-12