发明申请
- 专利标题： METHODS OF FORMING SINGLE CRYSTAL SILICON STRUCTURES AND SEMICONDUCTOR DEVICE STRUCTURES INCLUDING SINGLE CRYSTAL SILICON STRUCTURES
- 专利标题（中）： 形成单晶硅结构的方法和包括单晶硅结构的半导体器件结构
-
申请号： US13416834申请日： 2012-03-09
-
公开(公告)号： US20120168898A1公开(公告)日： 2012-07-05
- 发明人: Janos Fucsko , David H. Wells , Patrick Flynn , Whonchee Lee
- 申请人： Janos Fucsko , David H. Wells , Patrick Flynn , Whonchee Lee
- 申请人地址： US ID Boise
- 专利权人： MICRON TECHNOLOGY, INC.
- 当前专利权人： MICRON TECHNOLOGY, INC.
- 当前专利权人地址： US ID Boise
- 主分类号： H01L29/06
- IPC分类号： H01L29/06 ; H01L21/762 ; H01L21/306
摘要：
A single crystal silicon etching method includes providing a single crystal silicon substrate having at least one trench therein. The single crystal silicon substrate is exposed to an anisotropic etchant that undercuts the single crystal silicon. By controlling the length of the etch, single crystal silicon islands or smooth vertical walls in the single crystal silicon may be created.
公开/授权文献
信息查询
IPC分类:
