公开(公告)号：US08974655B2

公开(公告)日：2015-03-10

申请号：US12054077

申请日：2008-03-24

申请人： Wayne Huang ,  Whonchee Lee

发明人： Wayne Huang ,  Whonchee Lee

IPC分类号： C25F3/16 ,  B23H5/08 ,  H01L21/321

CPC分类号： C25F3/16 ,  B23H5/08 ,  H01L21/32125

摘要： A method of removing a material from a surface includes providing a substrate comprising a material having a surface, contacting the surface with a polishing medium, applying a voltage to the substrate to remove material from the surface, and changing the voltage during the removing material from the surface. An electro-chemical mechanical polishing method includes providing a substrate having a surface, applying a platen to the surface, applying a first voltage to the substrate, rotating the platen and surface relative to each other at a first rotational speed, increasing to a second voltage, and decreasing to a second rotational speed.

摘要翻译： 从表面去除材料的方法包括提供包括具有表面的材料的基板，使表面与抛光介质接触，向基板施加电压以从表面去除材料，以及将去除材料期间的电压从 表面。 一种电化学机械抛光方法，包括提供具有表面的基板，向表面施加压板，向基板施加第一电压，以第一转速相对于彼此旋转压板和表面，增加到第二电压 ，并减小到第二转速。

公开(公告)号：US08450214B2

公开(公告)日：2013-05-28

申请号：US13599791

申请日：2012-08-30

申请人： Whonchee Lee ,  Janos Fucsko ,  David H. Wells

发明人： Whonchee Lee ,  Janos Fucsko ,  David H. Wells

IPC分类号： H01L21/311

CPC分类号： H01L21/30608 ,  B81B2203/033 ,  B81B2203/0338 ,  B81C1/00626 ,  C30B29/06 ,  C30B33/10

摘要： A single crystal silicon etching method includes providing a single crystal silicon substrate having at least one trench therein. The substrate is exposed to a buffered fluoride etch solution which undercuts the silicon to provide lateral shelves when patterned in the direction. The resulting structure includes an undercut feature when patterned in the direction.

摘要翻译： 单晶硅蚀刻方法包括提供其中具有至少一个沟槽的单晶硅衬底。 将衬底暴露于缓冲的氟化物蚀刻溶液，其在<100>方向图案化时，其将硅切割以提供横向搁板。 当沿<100>方向图案化时，所得结构包括底切特征。

公开(公告)号：US08048756B2

公开(公告)日：2011-11-01

申请号：US12731049

申请日：2010-03-24

申请人： Whonchee Lee ,  Scott G. Meikle ,  Guy T. Blalock

发明人： Whonchee Lee ,  Scott G. Meikle ,  Guy T. Blalock

IPC分类号： H01L21/8242

CPC分类号： H01L21/31053 ,  H01L21/3212 ,  H01L21/32125 ,  H01L28/65 ,  H01L28/91

摘要： A microelectronic substrate and method for removing adjacent conductive and nonconductive materials from a microelectronic substrate. In one embodiment, the microelectronic substrate includes a substrate material (such as borophosphosilicate glass) having an aperture with a conductive material (such as platinum) disposed in the aperture and a fill material (such as phosphosilicate glass) in the aperture adjacent to the conductive material. The fill material can have a hardness of about 0.04 GPa or higher, and a microelectronics structure, such as an electrode, can be disposed in the aperture, for example, after removing the fill material from the aperture. Portions of the conductive and fill material external to the aperture can be removed by chemically-mechanically polishing the fill material, recessing the fill material inwardly from the conductive material, and electrochemically-mechanically polishing the conductive material. The hard fill material can resist penetration by conductive particles, and recessing the fill material can provide for more complete removal of the conductive material external to the aperture.

摘要翻译： 一种用于从微电子衬底去除相邻的导电和非导电材料的微电子衬底和方法。 在一个实施例中，微电子衬底包括具有设置在孔中的导电材料（例如铂）的孔的衬底材料（例如硼磷硅酸盐玻璃）和邻近导电的孔中的填充材料（例如磷硅玻璃） 材料。 填充材料可以具有约0.04GPa或更高的硬度，并且例如在从孔中去除填充材料之后，诸如电极的微电子结构可以设置在孔中。 孔的外部的导电和填充材料的部分可以通过化学机械抛光填充材料，将填充材料从导电材料向内凹陷，以及电化学机械抛光导电材料来去除。 硬填充材料可以抵抗导电颗粒的渗透，并且凹陷填充材料可以提供更全面地去除孔的外部的导电材料。

公开(公告)号：US07972485B2

公开(公告)日：2011-07-05

申请号：US12561824

申请日：2009-09-17

申请人： Whonchee Lee ,  Scott E. Moore ,  Scott G. Meikle

发明人： Whonchee Lee ,  Scott E. Moore ,  Scott G. Meikle

IPC分类号： C25F7/00

CPC分类号： B23H5/08 ,  B24B37/042 ,  C25F3/02 ,  C25F7/00

摘要： Methods and apparatuses for electromechanically and/or electrochemically-mechanically removing conductive material from a microelectronic substrate. An apparatus in accordance with one embodiment includes a support member configured to releasably carry a microelectronic substrate and first and second electrodes spaced apart from each other and from the microelectronic substrate. A polishing medium is positioned between the electrodes and the support member and has a polishing surface positioned to contact the microelectronic substrate. At least a portion of the first and second electrodes can be recessed from the polishing surface. A liquid, such as an electrolytic liquid, can be provided in the recess, for example, through flow passages in the electrodes and/or the polishing medium. A variable electrical signal is passed from at least one of the electrodes, through the electrolyte and to the microelectronic substrate to remove material from the substrate.

摘要翻译： 从微电子衬底机电和/或电化学机械去除导电材料的方法和装置。 根据一个实施例的装置包括被配置为可释放地携带微电子衬底和彼此间隔开的微电子衬底的第一和第二电极的支撑构件。 抛光介质位于电极和支撑构件之间，并且具有定位成接触微电子衬底的抛光表面。 第一和第二电极的至少一部分可以从抛光表面凹陷。 诸如电解液体的液体可以例如通过电极和/或抛光介质中的流动通道设置在凹部中。 可变电信号从至少一个电极通过电解质并传递到微电子衬底以从衬底去除材料。

公开(公告)号：US20100006428A1

公开(公告)日：2010-01-14

申请号：US12561824

申请日：2009-09-17

申请人： Whonchee Lee ,  Scott E. Moore ,  Scott G. Meikle

发明人： Whonchee Lee ,  Scott E. Moore ,  Scott G. Meikle

IPC分类号： C25B9/00

CPC分类号： B23H5/08 ,  B24B37/042 ,  C25F3/02 ,  C25F7/00

摘要： Methods and apparatuses for electromechanically and/or electrochemically-mechanically removing conductive material from a microelectronic substrate. An apparatus in accordance with one embodiment includes a support member configured to releasably carry a microelectronic substrate and first and second electrodes spaced apart from each other and from the microelectronic substrate. A polishing medium is positioned between the electrodes and the support member and has a polishing surface positioned to contact the microelectronic substrate. At least a portion of the first and second electrodes can be recessed from the polishing surface. A liquid, such as an electrolytic liquid, can be provided in the recess, for example, through flow passages in the electrodes and/or the polishing medium. A variable electrical signal is passed from at least one of the electrodes, through the electrolyte and to the microelectronic substrate to remove material from the substrate.

摘要翻译： 从微电子衬底机电和/或电化学机械去除导电材料的方法和装置。 根据一个实施例的装置包括被配置为可释放地携带微电子衬底和彼此间隔开的微电子衬底的第一和第二电极的支撑构件。 抛光介质位于电极和支撑构件之间，并且具有定位成接触微电子衬底的抛光表面。 第一和第二电极的至少一部分可以从抛光表面凹陷。 诸如电解液体的液体可以例如通过电极和/或抛光介质中的流动通道设置在凹部中。 可变电信号从至少一个电极通过电解质并传递到微电子衬底以从衬底去除材料。

公开(公告)号：US07618528B2

公开(公告)日：2009-11-17

申请号：US11616683

申请日：2006-12-27

申请人： Whonchee Lee ,  Scott E. Moore ,  Scott G. Meikle

发明人： Whonchee Lee ,  Scott E. Moore ,  Scott G. Meikle

IPC分类号： B23H5/06 ,  C25D17/00

CPC分类号： B23H5/08 ,  B24B37/042 ,  C25F3/02 ,  C25F7/00

摘要： Methods and apparatuses for electromechanically and/or electrochemically-mechanically removing conductive material from a microelectronic substrate. An apparatus in accordance with one embodiment includes a support member configured to releasably carry a microelectronic substrate and first and second electrodes spaced apart from each other and from the microelectronic substrate. A polishing medium is positioned between the electrodes and the support member and has a polishing surface positioned to contact the microelectronic substrate. At least a portion of the first and second electrodes can be recessed from the polishing surface. A liquid, such as an electrolytic liquid, can be provided in the recess, for example, through flow passages in the electrodes and/or the polishing medium. A variable electrical signal is passed from at least one of the electrodes, through the electrolyte and to the microelectronic substrate to remove material from the substrate.

摘要翻译： 从微电子衬底机电和/或电化学机械去除导电材料的方法和装置。 根据一个实施例的装置包括被配置为可释放地携带微电子衬底和彼此间隔开的微电子衬底的第一和第二电极的支撑构件。 抛光介质位于电极和支撑构件之间，并且具有定位成接触微电子衬底的抛光表面。 第一和第二电极的至少一部分可以从抛光表面凹陷。 诸如电解液体的液体可以例如通过电极和/或抛光介质中的流动通道设置在凹部中。 可变电信号从至少一个电极通过电解质并传递到微电子衬底以从衬底去除材料。

公开(公告)号：US20070281493A1

公开(公告)日：2007-12-06

申请号：US11445544

申请日：2006-06-02

申请人： Janos Fucsko ,  David H. Wells ,  Patrick Flynn ,  Whonchee Lee

发明人： Janos Fucsko ,  David H. Wells ,  Patrick Flynn ,  Whonchee Lee

IPC分类号： H01L21/302

CPC分类号： H01L21/30608 ,  H01L21/302 ,  H01L21/31116 ,  H01L21/76232 ,  H01L29/66818

摘要： A single crystal silicon etching method includes providing single crystal silicon substrate having at least one trench therein. The substrate is exposed to an anisotropic etchant which undercuts the silicon. By controlling the length of the etch, single crystal silicon islands or smooth vertical walls in the single crystal silicon may be created.

摘要翻译： 单晶硅蚀刻方法包括提供在其中具有至少一个沟槽的单晶硅衬底。 将衬底暴露于削弱硅的各向异性蚀刻剂。 通过控制蚀刻的长度，可以产生单晶硅中的单晶硅岛或平滑的垂直壁。

公开(公告)号：US20070278183A1

公开(公告)日：2007-12-06

申请号：US11445718

申请日：2006-06-02

申请人： Whonchee Lee ,  Janos Fucsko ,  David H. Wells

发明人： Whonchee Lee ,  Janos Fucsko ,  David H. Wells

IPC分类号： B44C1/22 ,  C03C15/00

CPC分类号： H01L21/30608 ,  B81B2203/033 ,  B81B2203/0338 ,  B81C1/00626 ,  C30B29/06 ,  C30B33/10

摘要： A single crystal silicon etching method includes providing a single crystal silicon substrate having at least one trench therein. The substrate is exposed to a buffered fluoride etch solution which undercuts the silicon to provide lateral shelves when patterned in the direction. The resulting structure includes an undercut feature when patterned in the direction.

摘要翻译： 单晶硅蚀刻方法包括提供其中具有至少一个沟槽的单晶硅衬底。 将衬底暴露于缓冲的氟化物蚀刻溶液，其在<100>方向图案化时，其将硅切割以提供横向搁板。 当沿<100>方向图案化时，所得结构包括底切特征。

公开(公告)号：US07134934B2

公开(公告)日：2006-11-14

申请号：US10230972

申请日：2002-08-29

申请人： Whonchee Lee ,  Scott E. Moore ,  Scott G. Meikle

发明人： Whonchee Lee ,  Scott E. Moore ,  Scott G. Meikle

IPC分类号： B24B49/00

CPC分类号： C25F7/00 ,  B23H5/08 ,  C25F3/14

摘要： Methods and apparatuses for detecting characteristics of a microelectronic substrate. A method in accordance with an embodiment of the invention includes positioning the microelectronic substrate proximate to and spaced apart from the first and second spaced apart electrodes, contacting the microelectronic substrate with a polishing surface of a polishing medium, removing conductive material from the microelectronic substrate by moving the substrate and/or the electrodes relative to each other while passing a variable electrical signal through the electrodes and the substrate, and detecting a change in the variable electrical signal or a supplemental electrical signal passing through the microelectronic substrate. The rate at which material is removed from the microelectronic substrate can be changed based at least in part on the change in the electrical signal.

公开(公告)号：US20060249397A1

公开(公告)日：2006-11-09

申请号：US11482586

申请日：2006-07-06

申请人： Whonchee Lee ,  Scott Moore ,  Scott Meikle

发明人： Whonchee Lee ,  Scott Moore ,  Scott Meikle

IPC分类号： B23H7/14

CPC分类号： C25F7/00 ,  B23H5/08 ,  C25F3/14

摘要： Methods and apparatuses for detecting characteristics of a microelectronic substrate. A method in accordance with an embodiment of the invention includes positioning the microelectronic substrate proximate to and spaced apart from the first and second spaced apart electrodes, contacting the microelectronic substrate with a polishing surface of a polishing medium, removing conductive material from the microelectronic substrate by moving the substrate and/or the electrodes relative to each other while passing a variable electrical signal through the electrodes and the substrate, and detecting a change in the variable electrical signal or a supplemental electrical signal passing through the microelectronic substrate. The rate at which material is removed from the microelectronic substrate can be changed based at least in part on the change in the electrical signal.