发明申请
US20120168916A1 Semiconductor Device and Method of Forming Open Cavity in TSV Interposer to Contain Semiconductor Die in WLCSMP
有权
半导体器件和在TSV插入件中形成开口腔以在WLCSMP中包含半导体晶片的方法
- 专利标题： Semiconductor Device and Method of Forming Open Cavity in TSV Interposer to Contain Semiconductor Die in WLCSMP
- 专利标题（中）： 半导体器件和在TSV插入件中形成开口腔以在WLCSMP中包含半导体晶片的方法
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申请号： US13420400申请日： 2012-03-14
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公开(公告)号： US20120168916A1公开(公告)日： 2012-07-05
- 发明人: HeeJo Chi , NamJu Cho , HanGil Shin
- 申请人： HeeJo Chi , NamJu Cho , HanGil Shin
- 申请人地址： SG Singapore
- 专利权人： STATS CHIPPAC, LTD.
- 当前专利权人： STATS CHIPPAC, LTD.
- 当前专利权人地址： SG Singapore
- 主分类号： H01L23/552
- IPC分类号： H01L23/552 ; H01L23/36
摘要：
A semiconductor device is made by mounting a semiconductor wafer to a temporary carrier. A plurality of TSV is formed through the wafer. A cavity is formed partially through the wafer. A first semiconductor die is mounted to a second semiconductor die. The first and second die are mounted to the wafer such that the first die is disposed over the wafer and electrically connected to the TSV and the second die is disposed within the cavity. An encapsulant is deposited over the wafer and first and second die. A portion of the encapsulant is removed to expose a first surface of the first die. A portion of the wafer is removed to expose the TSV and a surface of the second die. The remaining portion of the wafer operates as a TSV interposer for the first and second die. An interconnect structure is formed over the TSV interposer.