发明申请
- 专利标题： METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
- 专利标题（中）： 制造半导体器件的方法
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申请号： US13421171申请日： 2012-03-15
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公开(公告)号： US20120171795A1公开(公告)日： 2012-07-05
- 发明人: Shunpei YAMAZAKI , Toru Mitsuki , Tamae Takano
- 申请人： Shunpei YAMAZAKI , Toru Mitsuki , Tamae Takano
- 申请人地址： JP Atsugi-shi
- 专利权人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人地址： JP Atsugi-shi
- 优先权： JP2001-049468 20010223
- 主分类号： H01L21/20
- IPC分类号： H01L21/20 ; H01L33/16
摘要：
A method of performing irradiation of laser light is given as a method of crystallizing a semiconductor film. However, if laser light is irradiated to a semiconductor film, the semiconductor film is instantaneously melted and expands locally. The temperature gradient between a substrate and the semiconductor film is precipitous, distortions may develop in the semiconductor film. Thus, the film quality of the crystalline semiconductor film obtained will drop in some cases. With the present invention, distortions of the semiconductor film are reduced by heating the semiconductor film using a heat treatment process after performing crystallization of the semiconductor film using laser light. Compared to the localized heating due to the irradiation of laser light, the heat treatment process is performed over the entire substrate and semiconductor film. Therefore, it is possible to reduce distortions formed in the semiconductor film and to increase the physical properties of the semiconductor film.
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