发明申请
US20120171849A1 APPARATUS FOR FORMING DEPOSITED FILM AND METHOD FOR FORMING DEPOSITED FILM
有权
用于形成沉积膜的装置和形成沉积膜的方法
- 专利标题: APPARATUS FOR FORMING DEPOSITED FILM AND METHOD FOR FORMING DEPOSITED FILM
- 专利标题(中): 用于形成沉积膜的装置和形成沉积膜的方法
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申请号: US13390927申请日: 2010-09-24
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公开(公告)号: US20120171849A1公开(公告)日: 2012-07-05
- 发明人: Norikazu Ito , Shinichiro Inaba , Hiroshi Matsui , Koichiro Niira
- 申请人: Norikazu Ito , Shinichiro Inaba , Hiroshi Matsui , Koichiro Niira
- 申请人地址: JP Kyoto
- 专利权人: KYOCERA CORPORATION
- 当前专利权人: KYOCERA CORPORATION
- 当前专利权人地址: JP Kyoto
- 优先权: JP2009-220971 20090925
- 国际申请: PCT/JP2010/066567 WO 20100924
- 主分类号: H01L21/203
- IPC分类号: H01L21/203 ; C23C16/50
摘要:
In order to form a high quality film without causing in-plane nonuniformity in film quality, an apparatus for forming deposited film according to an aspect of the present invention includes: a chamber; a first electrode located in the chamber; a second electrode that is located in the chamber with a predetermined spacing from the first electrode and includes a plurality of supply parts configured to supply material gases; an introduction path connected to the supply parts, through which the material gases are introduced; a heater located in the introduction path; and a cooling mechanism configured to cool the second electrode.
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