Invention Application
- Patent Title: CONTROL METHOD AND ALLOCATION STRUCTURE FOR FLASH MEMORY DEVICE
- Patent Title (中): 闪存存储器件的控制方法和分配结构
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Application No.: US12981499Application Date: 2010-12-30
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Publication No.: US20120173791A1Publication Date: 2012-07-05
- Inventor: Chih-Hung Wang , Chao-Han Wu , Ting-Chung Hu
- Applicant: Chih-Hung Wang , Chao-Han Wu , Ting-Chung Hu
- Applicant Address: TW Hsinchu
- Assignee: SOLID STATE SYSTEM CO., LTD.
- Current Assignee: SOLID STATE SYSTEM CO., LTD.
- Current Assignee Address: TW Hsinchu
- Main IPC: G06F12/02
- IPC: G06F12/02

Abstract:
A control method and an allocation structure for a flash memory device are provided herein. The flash memory device has a first memory module and a second memory module. Physical blocks of the first memory module and physical blocks of the second memory module are respectively divided into a plurality of groups, each of which has a plurality of the physical blocks. A first subunit and a second subunit of a first allocation unit are interleavingly written into a first group of the groups of the first memory module and a second group of the groups of the second memory chip respectively. Additionally, a first subunit and a second subunit of a second allocation unit are interleavingly written into a third group of the groups of the first memory module and the second group, respectively.
Public/Granted literature
- US08713242B2 Control method and allocation structure for flash memory device Public/Granted day:2014-04-29
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