Invention Application
- Patent Title: MANUFACTURING METHOD OF THERMAL CONDUCTIVITY SUBSTRATE
- Patent Title (中): 热导率基板的制造方法
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Application No.: US13426619Application Date: 2012-03-22
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Publication No.: US20120175044A1Publication Date: 2012-07-12
- Inventor: Chin-Sheng Wang , Ching-Sheng Chen , Chien-Hung Wu
- Applicant: Chin-Sheng Wang , Ching-Sheng Chen , Chien-Hung Wu
- Applicant Address: TW Hsinchu
- Assignee: SUBTRON TECHNOLOGY CO., LTD.
- Current Assignee: SUBTRON TECHNOLOGY CO., LTD.
- Current Assignee Address: TW Hsinchu
- Priority: TW99131636 20100917
- Main IPC: B32B37/02
- IPC: B32B37/02 ; B32B37/14 ; B32B37/10

Abstract:
A thermal conductivity substrate including a metal substrate, a metal layer, an insulating layer, a plurality of conductive structures, a first conductive layer and a second conductive layer is provided. The metal layer is disposed on the metal substrate and entirely covers the metal substrate. The insulating layer is disposed on the metal layer. The conductive structures are embedded in the insulating layer and connected to a portion of the metal layer. The first conductive layer is disposed on the insulating layer. The second conductive layer is disposed on the first conductive layer and the conductive structures. The second conductive layer is electrically connected to a portion of the metal layer through the conductive structures. The second conductive layer and the conductive structures are integrally formed.
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