发明申请
US20120176393A1 MEMORY DEVICE, DISPLAY DEVICE EQUIPPED WITH MEMORY DEVICE, DRIVE METHOD FOR MEMORY DEVICE, AND DRIVE METHOD FOR DISPLAY DEVICE
审中-公开
存储装置，具有存储装置的显示装置，用于存储装置的驱动方法和用于显示装置的驱动方法
- 专利标题： MEMORY DEVICE, DISPLAY DEVICE EQUIPPED WITH MEMORY DEVICE, DRIVE METHOD FOR MEMORY DEVICE, AND DRIVE METHOD FOR DISPLAY DEVICE
- 专利标题（中）： 存储装置，具有存储装置的显示装置，用于存储装置的驱动方法和用于显示装置的驱动方法
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申请号： US13395977申请日： 2010-04-23
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公开(公告)号： US20120176393A1公开(公告)日： 2012-07-12
- 发明人: Hiroyuki Ohkawa , Yasushi Sasaki , Yuhichiroh Murakami , Shige Furuta , Seijirou Gyouten , Shuji Nishi
- 申请人： Hiroyuki Ohkawa , Yasushi Sasaki , Yuhichiroh Murakami , Shige Furuta , Seijirou Gyouten , Shuji Nishi
- 申请人地址： JP Osaka-shi, Osaka
- 专利权人： SHARP KABUSHIKI KAISHA
- 当前专利权人： SHARP KABUSHIKI KAISHA
- 当前专利权人地址： JP Osaka-shi, Osaka
- 优先权： JP2009-215063 20090916
- 国际申请： PCT/JP2010/057272 WO 20100423
- 主分类号： G09G5/36
- IPC分类号： G09G5/36 ; G11C5/02
摘要：
Provided is a memory device that allows an amount of leakage into a first retaining section to which a binary logic level is written to be balanced between different circuit states. A predetermined period is set in which in a state where a first control section turns off an output element, (i) a first retaining section and a second retaining section retain an identical binary logic level, (ii) an electric potential of a voltage supply is set to one of a first electric potential level and a second electric potential level, (iii) the other one of the first electric potential level and the second electric potential level is supplied from a column driver to a fourth wire, and (iv) subsequently the fourth wire is shifted to a floating state.